Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Peter W. Wyatt"'
Autor:
Edward F. DeLong, Bjarne Hove-Jensen, Peter W. Wyatt, Ascuncion Martinez, David L. Zechel, Fern R. McSorley
Publikováno v:
Journal of the American Chemical Society. 134:8364-8367
The sequential activities of PhnY, an α-ketoglutarate/Fe(II)-dependent dioxygenase, and PhnZ, a Fe(II)-dependent enzyme of the histidine-aspartate motif hydrolase family, cleave the carbon-phosphorus bond of the organophosphonate natural product 2-a
Autor:
Ewart W. Blackmore, T. Soares, Marty R. Shaneyfelt, Chenson Chen, Weilin Hu, Ronald D. Schrimpf, Harold L. Hughes, Brian Tyrrell, P. M. Gouker, P.J. McMarr, J.R. Schwank, J. R. Ahlbin, Richard D'Onofrio, Peter W. Wyatt, M.E. Nelson, K.J. Delikat, Stephanie L. Weeden-Wright
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2845-2854
Radiation effects are presented for the first time for vertically integrated 3 × 64-kb SOI SRAM circuits fabricated using the 3D process developed at MIT Lincoln Laboratory. Three fully-fabricated 2D circuit wafers are stacked using standard CMOS fa
Autor:
Brian Tyrrell, M. Renzi, Matthew J. Gadlage, J. R. Ahlbin, M. P. King, Peter W. Wyatt, Chenson Chen, En Xia Zhang, Robert A. Weller, Stephanie L. Weeden-Wright, Bharat L. Bhuva, P. M. Gouker, Lloyd W. Massengill, N. J. Gaspard, Ronald D. Schrimpf, N. M. Atkinson
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2555-2562
Single event transients are characterized for the first time in logic gate circuits fabricated in a novel 3DIC technology where SET test circuits are vertically integrated on three tiers in a 20- μm-thick layer. This 3D technology is extremely well
Publikováno v:
IEEE Transactions on Electron Devices. 58:419-426
The effective work function of a reactively sputtered TiN metal gate is shown to be tunable from 4.30 to 4.65 eV. The effective work function decreases with nitrogen flow during reactive sputter deposition. Nitrogen annealing increases the effective
Publikováno v:
Proceedings of the IEEE. 98:333-342
Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is
Autor:
P. M. Gouker, P. McMarr, H. Hughes, Peter W. Wyatt, Balaji Narasimham, Matthew J. Gadlage, B.L. Bhuva, Craig L. Keast, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. 56:3477-3482
Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI) technology using experiments and simulations. Logic circuits, i.e. CMOS inverter chains, were irradiated with cobalt-60 gamma radiation. When charge
Autor:
J. Brandt, Peter W. Wyatt, Matthew J. Gadlage, A.M. Soares, B. Narasimham, Craig L. Keast, P. M. Gouker, J.M. Knecht, Brian Tyrrell, Bharat L. Bhuva, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2854-2860
Single event transients were characterized experimentally in fast logic circuits fabricated in 0.18-mum FDSOI CMOS process using laser-probing techniques. We show that the transient pulse widens as it propagates; the widening is largely eliminated by
Autor:
Peter W. Wyatt, K. Warner, Robert Berger, Brian Tyrrell, Brian F. Aull, J.M. Knecht, Vyshnavi Suntharalingam, Bruce Wheeler, Chang-Lee Chen, Chenson Chen, A.M. Soares, J.A. Burns, P. M. Gouker, Donna Yost, Nisha Checka, Craig L. Keast
Publikováno v:
Handbook of 3D Integration
Autor:
Craig L. Keast, Pei-Lan Hsu, Mike Sprinkle, Walt A. de Heer, Jakub Kedzierski, P. Healey, Peter W. Wyatt, Claire Berger
Publikováno v:
IEEE Transactions on Electron Devices. 55:2078-2085
This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silic
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:522-529
This paper presents results of fully packaged RF microelectromechanical (RF-MEM) switches including capacitive series, series-shunt, and single-pole-four-throw (SP4T) switch nodes. The RF-MEM capacitive switches are packaged using recently developed