Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Peter Vogrinčič"'
Autor:
Ľubomír Vančo, Mário Kotlár, Viliam Vretenár, Magdaléna Kadlečíková, Marian Vojs, Peter Vogrinčič
Publikováno v:
Surfaces and Interfaces. 34:102309
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fda1ad893b470a3996bebe1f96066fdb
https://doi.org/10.1016/j.surfin.2022.102309
https://doi.org/10.1016/j.surfin.2022.102309
Autor:
Ľubomír Vančo, Leonid Satrapinskyy, Peter Vogrinčič, Pavol Šutta, Olindo Isabella, Miro Zeman, Ana Montes, Yilei Tian, Mária Čaplovičová
Publikováno v:
Advanced Materials Interfaces, 7(19)
The knowledge of the structural and compositional details of Si/BaSi2/Si heterostructure annealed at high temperature is a prerequisite for BaSi2 application in heterojunction thin-film solar cells. For this purpose, Si/BaSi2/Si heterostructures depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f850ee3946926ff75c66cd5dd522df10
http://resolver.tudelft.nl/uuid:8a002ec8-ce8f-49cb-91f2-774de6ab0b66
http://resolver.tudelft.nl/uuid:8a002ec8-ce8f-49cb-91f2-774de6ab0b66
Autor:
Miro Zeman, Olindo Isabella, Yilei Tian, L’ubomír Vančo, Pavol Šutta, Robin Vismara, Steve van Doorene, M. Veselý, Peter Vogrinčič
Publikováno v:
ACS Applied Energy Materials, 1(7)
Barium disilicide (BaSi2) has been regarded as a promising absorber material for high-efficiency thin-film solar cells. However, it has confronted issues related to material synthesis and quality control. Here, we fabricate BaSi2 thin films via an in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc6ec9fb5c8ef60eb0a93d907edec8c0
https://doi.org/10.1021/acsaem.8b00486
https://doi.org/10.1021/acsaem.8b00486
Autor:
Mário Kotlár, Peter Vogrinčič, Viliam Vretenár, Jozef Liday, Vlastimil Řeháček, Marián Marton
Publikováno v:
Journal of Electrical Engineering. 66:344-347
Due to their properties, carbon nanotubes and reduced graphene oxide are highly promising materials for obtaining low-resistance ohmic contacts to p-GaN with good optical transparency for visible light. In this contribution we designed a combination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23f9ec9e50831a14cf071eb6ea37d956
https://doi.org/10.2478/jee-2015-0057
https://doi.org/10.2478/jee-2015-0057
Autor:
Marianna Španková, M. Talacko, Edmund Dobročka, Stefan Chromik, Peter Vogrinčič, Jozef Liday, Vladimír Štrbík, Š. Gaži, M. Sojková
Publikováno v:
Vacuum. 119:250-255
Thin films of thallium based superconductors were prepared successfully using sputtering target fabricated as a mixture of barium fluoride, calcium fluoride and copper oxide. Such a target is stable, does not degrade and does not involve any special
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4097611e27574e1326a069395313e76d
https://doi.org/10.1016/j.vacuum.2015.05.038
https://doi.org/10.1016/j.vacuum.2015.05.038
Autor:
I. Hotový, Juraj Breza, Viliam Vretenár, Peter Vogrinčič, Mário Kotlár, Jozef Liday, Marián Marton, Ivo Vávra, Vlastimil Řeháček
Publikováno v:
Applied Surface Science. 312:63-67
We have examined new structures for ohmic contacts to p-GaN, mainly for applications in light emitting devices, based on a layer of single-walled carbon nanotubes (SWCNT) and metallic layers of Au/Cr, Au/Ni–Mg(–O) namely in configurations Au/Cr/S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0c5bdc2d9a2f5361e1784034f440704
https://doi.org/10.1016/j.apsusc.2014.05.156
https://doi.org/10.1016/j.apsusc.2014.05.156
Autor:
Viliam Vretenár, Peter Vogrinčič, Jozef Liday, Vlastimil Rehacek, Marián Marton, Mário Kotlár
Publikováno v:
Journal of Electrical Engineering. 64:323-326
We have designed and verified a new structure for ohmic contacts to p-GaN, mainly for applications in light emitting devices based on a layer of single-walled carbon nanotubes (SWCNT) and metallic layers of Cr and Au, namely in configuration Au/Cr/SW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::040824566148e474f967d9df28730cc0
https://doi.org/10.2478/jee-2013-0047
https://doi.org/10.2478/jee-2013-0047
Publikováno v:
Journal of Electrical Engineering. 63:397-401
The work investigates an increase of the density of free charge carriers in the sub-surface region of p-GaN by adding p-type dopants into the Ni-O layer of an Au/Ni-O metallization structure. We have examined electrical properties and concentration d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c278177ba3179b267c726c47f7854cd
https://doi.org/10.2478/v10187-012-0059-x
https://doi.org/10.2478/v10187-012-0059-x
Autor:
Jozef Liday, Peter Vogrinčič, Ivan Hotový, Alberta Bonanni, Helmut Sitter, Tibor Lalinský, Gabriel Vanko, Vlastimil Řeháček, Juraj Breza, Gernot Ecke
Publikováno v:
ResearcherID
Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization Electrical characteristics and elemental depth profiles of ohmic contacts to p-GaN using Au/Ni-Mg-Ox metallization have been investigated. The objective was to examine the possibilities of increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51e52cd246a2da81b184a7d20e8f5260
https://doi.org/10.2478/v10187-010-0058-8
https://doi.org/10.2478/v10187-010-0058-8
Autor:
Peter Vogrinčič, Vladimír Štrbík, Jozef Liday, Ivo Vávra, P. Gierlowski, Juan P. Espinós, Stefan Chromik, Edmund Dobročka, M. Sojková, Tibor Lalinský, Marianna Španková
Publikováno v:
Applied Surface Science. 256:5618-5622
Epitaxial YBCO thin films have been grown on hexagonal GaN/ c -sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d78fb0d680cbdf29c9fe6c762b21d9e
https://doi.org/10.1016/j.apsusc.2010.03.035
https://doi.org/10.1016/j.apsusc.2010.03.035