Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Peter U, Jepsen"'
Autor:
Patrick R. Whelan, Domenico De Fazio, Iwona Pasternak, Joachim D. Thomsen, Steffen Zelzer, Martin O. Mikkelsen, Timothy J. Booth, Lars Diekhöner, Ugo Sassi, Duncan Johnstone, Paul A. Midgley, Wlodek Strupinski, Peter U. Jepsen, Andrea C. Ferrari, Peter Bøggild
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Terahertz time-domain spectroscopy (THz-TDS) can be used to map spatial variations in electrical properties such as sheet conductivity, carrier density, and carrier mobility in graphene. Here, we consider wafer-scale graphene grown on german
Externí odkaz:
https://doaj.org/article/f221f236947e4dd5af7fcbd8f77ad5cc
Publikováno v:
IEEE Photonics Journal, Vol 8, Iss 5, Pp 1-8 (2016)
In this paper, a terahertz (THz) wireless communication system at 400 GHz with various modulation formats [on-off keying (OOK), quadrature phase-shift keying (QPSK), 16-quadrature amplitude modulation (16-QAM), and 32-quadrature amplitude modulation
Externí odkaz:
https://doaj.org/article/b1cfe385903b4fce822c3111bb2b768d
Autor:
Henrik B. Lassen, Jonas D. Buron, Roy Kelner, Peter F. Nielsen, Edmund J. R. Kelleher, Peter U. Jepsen
Publikováno v:
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55926076e88c6ea9f5c2a913b80f0832
https://doi.org/10.1109/irmmw-thz50927.2022.9896118
https://doi.org/10.1109/irmmw-thz50927.2022.9896118
Publikováno v:
New Journal of Physics, Vol 19, Iss 12, p 123018 (2017)
We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use u
Externí odkaz:
https://doaj.org/article/5943df18c2984913b9dc9186b144b3d5
Autor:
David M A, Mackenzie, Kristoffer G, Kalhauge, Patrick R, Whelan, Frederik W, Østergaard, Iwona, Pasternak, Wlodek, Strupinski, Peter, Bøggild, Peter U, Jepsen, Dirch H, Petersen
Publikováno v:
Nanotechnology. 31(22)
Micro four-point probes (M4PP) provide rapid and automated lithography-free transport properties of planar surfaces including two-dimensional materials. We perform sheet conductance wafer maps of graphene directly grown on a 100 mm diameter SiC wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e8ae6a8464db7156ee2a714b2400553a
https://pubmed.ncbi.nlm.nih.gov/32167935
https://pubmed.ncbi.nlm.nih.gov/32167935
Autor:
Wenqian Yao, Jianing Zhang, Jie Ji, He Yang, Binbin Zhou, Xin Chen, Peter Bøggild, Peter U. Jepsen, Jilin Tang, Fuyi Wang, Li Zhang, Jiahui Liu, Bin Wu, Jichen Dong, Yunqi Liu
Publikováno v:
Advanced Materials. 34:2270063
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9685983441fa0fd32f41e271c3a63a8
https://doi.org/10.1002/adma.202270063
https://doi.org/10.1002/adma.202270063
Autor:
Abebe T Tarekegne, Krzysztof Iwaszczuk, Maksim Zalkovskij, Andrew C Strikwerda, Peter U Jepsen
Publikováno v:
New Journal of Physics, Vol 17, Iss 4, p 043002 (2015)
We report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients. Local terahertz peak electric fields of several MV cm ^−1 are obtained by field en
Externí odkaz:
https://doaj.org/article/17325f7e84b84a3f9312e7da4defaa64