Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Peter Storck"'
Autor:
Martin Albrecht, Peter Storck, Tobias Schulz, L. Becker, M. H. Zoellner, Thomas Schroeder, Anna Marzegalli, L. Di Gaspare, G Schwalb, M. De Seta, Giovanni Capellini, Francesco Montalenti, F Rovaris
Publikováno v:
Journal of Applied Physics
Strain relaxed Si 1 − x Ge x buffer layers on Si(001) can be used as virtual substrates for the growth of both strained Si and strained SiGe, which are suitable materials for sub-7 nm CMOS devices due to their enhanced carrier mobility. For industr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::748630484d248f96cca0e41722023e49
https://hdl.handle.net/11590/375292
https://hdl.handle.net/11590/375292
Autor:
Dan Mocuta, E. Chiu, Nadine Collaert, Roger Loo, Robert Langer, A. De Keersgieter, Paola Favia, Liesbeth Witters, Hiroaki Arimura, Frank Holsteyns, Farid Sebaai, Kathy Barla, E. Vancoille, Andreas Schulze, Tom Schram, V. De Heyn, Steven Bilodeau, Andriy Hikavyy, Peter Storck, Jerome Mitard, A. Opdebeeck, Katia Devriendt, Emanuel I. Cooper, Christa Vrancken, Ruben R. Lieten, Geert Eneman, Kurt Wostyn, Alexey Milenin, Niamh Waldron
Publikováno v:
IEEE Transactions on Electron Devices. 64:4587-4593
Strained Ge p-channel gate-all-around (GAA) devices with Si-passivation are demonstrated on high-density 45-nm active pitch starting from 300-mm SiGe strain relaxed buffer wafers. While single horizontal Ge nanowire (NW) devices are demonstrated, the
Autor:
Giovanni Capellini, Peter Zaumseil, G Schwalb, Thomas Schroeder, Francesco Montalenti, F Rovaris, Peter Storck, Luciana Di Gaspare, Monica De Seta, Marvin Hartwig Zoellner, Anna Marzegalli
Publikováno v:
PHYSICAL REVIEW B
Regular surface undulations, called cross-hatch patterns, appearing at the free surface of lattice-mismatched heteroepitaxial films are a key signature of plastic relaxation. Here we show that the dynamics of cross-hatch formation is accurately descr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e693288b7fb74cd20cd6bd42eb9e621c
https://hdl.handle.net/11590/354446
https://hdl.handle.net/11590/354446
Autor:
Wolfgang M. Klesse, Thomas Schroeder, M. A. Schubert, Prabha Sana, H. Tetzner, S. B. Thapa, Giovanni Capellini, Peter Storck, M. H. Zoellner
Publikováno v:
Applied Physics Letters. 116:252101
The integration of GaN on Si as large scale substrates still faces many hurdles. Besides the large difference in the lattice constant and the high thermal mismatch existing between GaN and Si, spiral hillock growth phenomena are common problems in th
Autor:
Peter Zaumseil, Francesco Montalenti, Markus Andreas Schubert, G Schwalb, Anna Marzegalli, F Rovaris, Monica De Seta, Thomas Schroeder, Giovanni Capellini, Carsten Richter, Luciana Di Gaspare, Tobias U. Schülli, Peter Storck, Marvin Hartwig Zoellner
We provide an in-depth characterization of the dislocation distribution in partially relaxed Si0.92Ge0.08/Si(001) films. This is achieved by an innovative and general method, combining two state-of-the-art characterization techniques through suitable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0c45a2656c03d16bc29e8e8cdfeef17
http://hdl.handle.net/10281/214424
http://hdl.handle.net/10281/214424
Autor:
Martin Vorderwestner, Peter Zaumseil, Gregorz Kozlowski, Oksana Fursenko, Thomas Schroeder, Peter Storck
Publikováno v:
ECS Transactions
We report on the structural characterization of state-of-the-art SiGe graded buffers on Si(001) substrates with a diameter of 300 mm with and without a backside stressor. The main beneficial effect of the backside stressor is a clear improvement in s
Autor:
Jens Rip, Thomas Buschhardt, Peter Storck, K. Kenis, Roger Loo, Martin Vorderwestner, Laurent Souriau, Patrick Ong
Publikováno v:
Journal of Crystal Growth. 324:15-21
Further improving complementary metal oxide semiconductor (CMOS) performance beyond the 15 nm generation likely requires the use of high mobility materials like Ge for pMOS devices. However, Ge pMOS devices made in relaxed Ge do not out-perform curre
Autor:
Alexey Kondratyev, Roman Talalaev, Martin Vorderwestner, Art Amamchyan, Egbert Woelk, Peter Storck
Publikováno v:
Thin Solid Films. 518:S23-S29
The effect of Sb on the growth behavior and the layer quality of graded SiGe buffer layers was studied at high-temperature CVD conditions. Sb was provided as SbCl 5 additive to the GeCl 4 precursor. Overall growth kinetics of SiGe did not change in t
Autor:
Peter Zaumseil, Marvin Hartwig Zoellner, Christian Reich, Tobias U. Schülli, Giovanni Capellini, Ya-Hong Xie, Francesco Montalenti, Thomas Schroeder, Peter Storck, Anna Marzegalli, Maik Häberlen, Gilbert A. Chahine, Marie-Ingrid Richard
Publikováno v:
ACS applied materials & interfaces, vol 7, iss 17
Zoellner, MH; Richard, MI; Chahine, GA; Zaumseil, P; Reich, C; Capellini, G; et al.(2015). Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy. ACS Applied Materials and Interfaces, 7(17), 9031-9037. doi: 10.1021/am508968b. UCLA: Retrieved from: http://www.escholarship.org/uc/item/27v653s5
Zoellner, MH; Richard, MI; Chahine, GA; Zaumseil, P; Reich, C; Capellini, G; et al.(2015). Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy. ACS Applied Materials and Interfaces, 7(17), 9031-9037. doi: 10.1021/am508968b. UCLA: Retrieved from: http://www.escholarship.org/uc/item/27v653s5
Advanced semiconductor heterostructures are at the very heart of many modern technologies, including aggressively scaled complementary metal oxide semiconductor transistors for high performance computing and laser diodes for low power solid state lig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3af71dbb60c8fec6d715d3baced653ef
http://hdl.handle.net/10281/110750
http://hdl.handle.net/10281/110750
Publikováno v:
Chemie in unserer Zeit. 37:198-208
Einkristalline Halbleiterscheiben aus Silicium stellen die Grundlage fur mikroelektronische Bauelemente dar. Die Umwandlung des Ausgangsmaterials Quarz in eine epitaktisch beschichtete 300-mm-Scheibe umfasst eine Vielzahl von Prozessschritten, die te