Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Peter Sichman"'
Autor:
Jan Kuzmik, Alexander Satka, Stanislav Hasenöhrl, J. Priesol, S. Hascik, Ales Chvala, Roman Stoklas, Peter Sichman
Publikováno v:
IEEE Transactions on Electron Devices. 68:2365-2371
Vertical current conduction in a 1.3- $\mu \text{m}$ -thick semi-insulating (SI) C-doped GaN grown on a GaN substrate is analyzed. During the growth, pressure was varied from 100 to 20 mbar in order to increase C concentration from $\sim 1\times 10^{
Autor:
Dagmar Gregusova, Ondrej Pohorelec, Milan Tapajna, Michal Blaho, Filip Gucmann, Roman Stoklas, Stanislav Hasenohrl, Agata Laurencikova, Peter Sichman, Stefan Hascik, Jan Kuzmik
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Autor:
Stanislav Hasenöhrl, Jan Kuzmik, Juraj Marek, Alexander Satka, Š. Haščík, Roman Stoklas, Peter Sichman, A. Vincze, J. Priesol, Edmund Dobročka, Ales Chvala, F. Gucmann
Publikováno v:
Materials Science in Semiconductor Processing. 118:105203
Samples comprising 1.3 μm-thick C-doped semi-insulating (SI) GaN layer sandwiched between two n-GaN layers were grown on sapphire or conductive GaN substrates by metal-organic chemical vapor phase epitaxy at varied reactor pressure between 100 and 2
Autor:
S. Hascik, A. Seifertová, Dagmar Gregušová, J. Dérer, Jan Kuzmik, Joachim Würfl, Frank Brunner, M. Blaho, Agáta Laurenčíková, Peter Sichman
Publikováno v:
physica status solidi (a). 214:1700407
The proposal, processing and performance of n+GaN/InGaN/AlGaN/GaN normally-off metal-oxide-semiconductor (MOS) HEMTs with a recessed 2-μm long gate/8-μm source-drain distance are presented. It is shown that by using a negative polarization charge a