Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Peter Roitman"'
Publikováno v:
MRS Bulletin. 23:25-29
Oxygen-implanted silicon-on-insulator (SOI) material, or SIMOX (separation by implantation of oxygen), is another chapter in the continuing development of new material technologies for use by the semiconductor industry. Building integrated circuits (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bebe8e98734b60693de212a24ee5ac88
https://doi.org/10.1557/s0883769400029791
https://doi.org/10.1557/s0883769400029791
Autor:
J.T. Nee, J.U. Yoon, George A. Brown, J.E. Chung, J.-H.Y. Krska, G. J. Campisi, Peter Roitman
Publikováno v:
IEEE Transactions on Electron Devices. 43:1956-1964
A new model for SIMOX buried-oxide (BOX) high-field conduction which incorporates the role of silicon islands and BOX nonstoichiometry is presented. For single-implant SIMOX BOX high-field conduction, the onset E-field for both positive and negative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5cc258acfd0f07c74b23683fbbd91fd
https://doi.org/10.1109/16.543033
https://doi.org/10.1109/16.543033
Publikováno v:
Journal of Electronic Materials. 22:207-214
Defects in ungated n- or p-type and gated p-type resistors have been characterized by photoinduced transient spectroscopy (PITS). These resistors were fabricated with p-type separation by implanted oxygen (SIMOX) wafers with a single-energy 200-keV o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3c59795948e9b5995251645de1af085
https://doi.org/10.1007/bf02665028
https://doi.org/10.1007/bf02665028
Publikováno v:
IEEE Transactions on Nuclear Science. 39:2114-2120
The authors present direct evidence for the creation of deep electron traps in SIMOX (separation by implantation of oxygen) buried oxides. In addition, they present combined electrical and electron spin resonance evidence which demonstrates that at l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e8b4837f92ec9d71760ae4ce7424eef
https://doi.org/10.1109/23.211410
https://doi.org/10.1109/23.211410
Publikováno v:
IEEE Transactions on Nuclear Science. 39:2086-2097
Shallow electron and deep hole trapping in the buried oxides of SIMOX (separation by implantation of oxygen), ZMR, and BESOI (bond and etchback silicon-on-insulator) material are examined. By irradiating the oxides with X-rays at cryogenic temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40cb8f4741b65db3ebc76beee28a48fa
https://doi.org/10.1109/23.211407
https://doi.org/10.1109/23.211407
Publikováno v:
Journal of Research of the National Institute of Standards and Technology
The calibration of a new submicrometer magnification standard for electron microscopes is described. The new standard is based on the width of a thin thermal-oxide film sandwiched between a silicon single-crystal substrate and a polysilicon capping l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0772f8570ddfa74b0641f17a5238c542
http://europepmc.org/articles/PMC4914234
http://europepmc.org/articles/PMC4914234
Publikováno v:
Surface and Interface Analysis. 17:57-61
Silicon films produced by the SIMOX process (separation by implanted oxygen) must be annealed at high temperature to remove the crystal damage introduced during implantation of the high oxygen dose. Different annealing gases, temperatures and times h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d969147f4be6819ebd4aa99ac350fae
https://doi.org/10.1002/sia.740170113
https://doi.org/10.1002/sia.740170113
Publikováno v:
Journal of Applied Physics. 68:3456-3460
Photoinduced transient spectroscopy (PITS) was used to measure the persistent photoconductive (PPC) response in n‐type separation by implanted oxygen (SIMOX) film resistors. A broadband, single‐shot, flashlamp‐pumped dye laser pulse was used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f65d1e919eae0d0e81c358f896e5b9c0
https://doi.org/10.1063/1.346356
https://doi.org/10.1063/1.346356
Publikováno v:
IEEE International SOI Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8597c9cc2039b5968538b66926a24d18
https://doi.org/10.1109/soi.1992.664778
https://doi.org/10.1109/soi.1992.664778
Publikováno v:
IEEE International SOI Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2aef6dfea5aea55cc5a05a87b6a6d3a
https://doi.org/10.1109/soi.1992.664779
https://doi.org/10.1109/soi.1992.664779