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pro vyhledávání: '"Peter Oles"'
Publikováno v:
Applied Physics Letters. 121:062107
We present characterization results of integrated vacuum gaps in semiconductors and report the highest breakdown field of dielectric layers ever recorded within microfabricated semiconductor devices. Difficulties associated with the characterization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedf830857edc583deb77cc2b36792e8
https://doi.org/10.1063/5.0097043
https://doi.org/10.1063/5.0097043
Publikováno v:
Applied Physics Letters; 8/8/2022, Vol. 121 Issue 6, p1-5, 5p