Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Peter Nicholas Manos"'
Publikováno v:
ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005..
This paper demonstrates that the threshold voltages of CMOS transistors can vary significantly depending on their proximity to well boundary. This well proximity effect (WPE) is caused by the well implant atoms that scatter laterally from the photo-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d74d6cfc77c90bfed714aafc556e1589
https://doi.org/10.1109/issm.2005.1513333
https://doi.org/10.1109/issm.2005.1513333
Autor:
C. Hart, Peter Nicholas Manos
Publikováno v:
IEEE Electron Device Letters. 11:309-311
A structure that exhibits superior data retention, compared to the conventional erasable programmable read-only memory (EPROM) cell, while still using phosphosilicate glass (PSG) passivation, is described. The nitrided self-aligned MOS (NIT-SAMOS) em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c63005b444f10fb4083461d36a8e851
https://doi.org/10.1109/55.56484
https://doi.org/10.1109/55.56484
Autor:
S.K. Cheng, Peter Nicholas Manos
Publikováno v:
IEEE Circuits and Devices Magazine. 5:31-38
The variation of basic MOS device properties with operating temperature is examined. These devices include both n-channel and p-channel transistors, resistors, junction diodes, and precision capacitors. The theory of such variations is briefly examin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b08da095ec940d43c8e0999632402d52
https://doi.org/10.1109/101.29900
https://doi.org/10.1109/101.29900