Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Peter Nicholas Heys"'
Autor:
Peter Nicholas Heys, Matthew Werner, J. S. Wrench, Helen C. Aspinall, J. Basca, Anthony C. Jones, Hywel O. Davies, Paul R. Chalker, Peter J. King, Kate Black
Publikováno v:
Thin Solid Films. 519:4192-4195
Cerium oxide dielectric thin films have been grown on n-type silicon by atomic layer deposition using a monomeric homoleptic Ce IV alkoxide precursor with water vapour. Herein we report the dielectric properties of CeO 2 films deposited from tetrakis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad5da5160dd91cf2755a24caecb66ea1
https://doi.org/10.1016/j.tsf.2011.02.025
https://doi.org/10.1016/j.tsf.2011.02.025
Autor:
John Bacsa, Alexander Steiner, Rajesh Odedra, Sobia Ashraf, Anthony C. Jones, Peter Nicholas Heys, Paul A. Williams, Sarah Hindley, Paul R. Chalker, Peter Beahan
Publikováno v:
Chemical Vapor Deposition. 17:45-53
The dimethylzinc-bidentate ether adducts [Me2Zn(1,4-dioxane)] (1), [Me2Zn(1,2-dimethoxyethane)] (2) and [Me2Zn(1,4-thioxane)] (3) are used as precursors for the growth of vertically aligned zinc oxide (ZnO) nanowires (NWs) by liquid-injection, metal-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ff77a9543a20bf558fa449f6556ef0
https://doi.org/10.1002/cvde.201006881
https://doi.org/10.1002/cvde.201006881
Autor:
P. Beahan, Paul R. Chalker, Ravi Kanjolia, Sobia Ashraf, P.A. Williams, John Bacsa, Rajesh Odedra, Sarah Hindley, Kate Black, Peter Nicholas Heys, Anthony C. Jones
Publikováno v:
Journal of Crystal Growth. 315:292-296
The dimethylzinc adduct [Me 2 Zn(1,4-dioxane)] has been used for the growth of vertically aligned ZnO nanowires by liquid injection MOCVD. The ZnO nanowires were deposited at temperatures of 450 and 500 °C on Si(1 1 1) and F-doped SnO 2 /glass subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aab107e27e7483bffee6b921291833d2
https://doi.org/10.1016/j.jcrysgro.2010.09.016
https://doi.org/10.1016/j.jcrysgro.2010.09.016
Autor:
SE Stephen Potts, Hywel O. Davies, Fawzi Abou-Chahine, Claire J. Carmalt, Noemi Leick, Christopher S. Blackman, Wilhelmus M. M. Kessels, Peter Nicholas Heys
Publikováno v:
Inorganica Chimica Acta, 363(6), 1077-1083. Elsevier
Low pressure chemical vapour deposition (LPCVD) of [ZrCp 2 (NMe 2 ) 2 ] ( 1 ), [ZrCp 2 (η 2 -MeNCH 2 CH 2 NMe)] ( 2 ), [ZrCp′ 2 (NMe 2 ) 2 ] ( 3 ) and [ZrCp′ 2 (NEt 2 ) 2 ] ( 4 ) (Cp = η 5 -cyclopentadienyl, Cp′ = η 5 -monomethylcyclopentadi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a51f70619dae410bcfe7f31734c9d2d9
https://doi.org/10.1016/j.ica.2009.07.004
https://doi.org/10.1016/j.ica.2009.07.004
Autor:
Paul O'Brien, James Raftery, Anthony C. Jones, Paul A. Marshall, Peter Nicholas Heys, Gary W. Critchlow, Kate Black, John Bacsa, Mohammad Afzaal, Hywel O. Davies, Paul R. Chalker
Publikováno v:
Chemical Vapor Deposition. 16:93-99
The new titanium 2,5-dimethylpyrrolyl complexes [(Me(2)C(4)H(2)N)Ti(NMe(2))(3)] and [(Me(2)C(4)H(2)N)Ti(mu(2)-O(i)Pr)(O(i)Pr)(2)](2) and the previously reported titanium pyrrolyl complex [(C(4)H(4)N)Ti(mu(2)-O(i)Pr)(O(i)Pr)(2)](2) are synthesized and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a06d133170b7182f5b93991432a06a5
https://doi.org/10.1002/cvde.200906818
https://doi.org/10.1002/cvde.200906818
Autor:
Paul O'Brien, Kate Black, Peter Nicholas Heys, Paul R. Chalker, Anthony C. Jones, John Bacsa, Mohammad Afzaal, Hywel O. Davies, Paul A. Marshall
Publikováno v:
ECS Transactions. 25:813-819
The new titanium 2,5-dimethylpyrrolyl complexes [(2,5-Me2C4H2N)Ti(NMe2)3] and [(2,5-Me2C4H2N)Ti(OPri)3]2 have been used for the deposition of TiO2 films by liquid injection ALD. TiO2 films deposited at a substrate temperature of 250oC contained resid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ffd0b3926b87742e23c9c03be89614c
https://doi.org/10.1149/1.3207671
https://doi.org/10.1149/1.3207671
Publikováno v:
ECS Transactions. 16:79-86
Atomic Layer Deposition (ALD) has been identified as one of the primary technologies to fabricate devices with novel architecture. This requires design and development of advanced ALD precursors that can withstand the rigors of various integration st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::729da3b3a7ecfbeaa869e49f059ea279
https://doi.org/10.1149/1.2979983
https://doi.org/10.1149/1.2979983
Autor:
Pouvanart Taechakumput, Jeff Gaskell, Anthony C. Jones, Paul R. Chalker, Helen C. Aspinall, Stephen Taylor, Peter Nicholas Heys, Matthew Werner
Publikováno v:
Chemical Vapor Deposition. 13:684-690
Thin films of lanthanum zirconium oxide, LaxZr1–xO2–δ (x = 0.09 – 0.77) are deposited by liquid injection metal-organic (MO)CVD and atomic layer deposition (ALD) using toluene solutions of the precursors [(iPrCp)3La] and [(MeCp)2ZrMe(OMe)]. Au
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11ae2814a9036621878b026fc3b35a75
https://doi.org/10.1002/cvde.200706637
https://doi.org/10.1002/cvde.200706637
Autor:
Peter Nicholas Heys, Paul R. Chalker, Matthew Werner, Pouvanart Taechakumput, Ruairi O'Kane, Rajesh Odedra, Anthony C. Jones, Stephen Taylor, Jeff Gaskell, Kate Black
Publikováno v:
Chemical Vapor Deposition. 13:609-617
Thin films of HfO2 are deposited by liquid injection metal-organic (MO) CVD and atomic layer deposition (ALD) using the new cyclopentadienyl precursors [(MeCp)2HfMe(OiPr)] and [(MeCp)2HfMe(mmp)] (mmp = OCMe2CH2OMe). Both precursors evaporate at moder
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0518021b63a304e60aed1e67f4ca8fd9
https://doi.org/10.1002/cvde.200706589
https://doi.org/10.1002/cvde.200706589
Autor:
Simon A. Rushworth, Peter Nicholas Heys, Paul T. Williams, K.M. Coward, Thomas Leese, Hywel O. Davies, Louis Kempster, Rajesh Odedra, Fuquan Song
Publikováno v:
Surface and Coatings Technology. 201:9060-9065
The development of novel precursors for advanced semiconductor applications requires molecular engineering and chemical tailoring to obtain specific physical properties and performance capabilities. Having identified promising avenues in ligand desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa7940b47ed9bbdd7db74002027694f
https://doi.org/10.1016/j.surfcoat.2007.04.050
https://doi.org/10.1016/j.surfcoat.2007.04.050