Zobrazeno 1 - 10
of 116
pro vyhledávání: '"Peter Nam"'
Autor:
B. Oyama, Ben Poust, Daniel Ching, E. Kaneshiro, Kelly Hennig, Peter Nam, Reynold Kagiwada, John Chen, Augusto Gutierrez-Aitken, Patty Chang-Chien, Aaron Oki, Dennis Scott, Khanh Thai
Publikováno v:
ECS Transactions. 50:161-168
Under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program, Northrop Grumman Aerospace Systems (NGAS) has developed an advanced heterogeneous integration technology to intimately integrate compound semiconductor (CS) devices and cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d3b13dd2915999d35ce294335fccf8c
https://doi.org/10.1149/05007.0161ecst
https://doi.org/10.1149/05007.0161ecst
Autor:
Craig Geiger, Khanh Thai, Kelly Hennig, Mattew Parlee, B. Oyama, Joe Zhou, Ben Poust, Augusto Gutierrez-Aitken, Patty Chang-Chien, Rajinder Sandhu, Wen Phan, Dennis Scott, Peter Nam
Publikováno v:
ECS Transactions. 16:243-249
Northrop Grumman Space Technology has developed an integration technology that is capable of intimately integrating III-V semiconductor devices with Si CMOS under DARPA’s COSMOS program. The integration approach is based on a direct face-to-face bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2bd9b5aeddbc7956b2eb6c9a55d67b2
https://doi.org/10.1149/1.2982875
https://doi.org/10.1149/1.2982875
Autor:
Fred Dai, Peter Nam, M. Yajima, Wen-Ben Luo, Xianglin Zeng, Mike Biedenbender, Jiaying Wang, Scott Olson, David Farkas, J. Uyeda, Michael E. Barsky
Publikováno v:
ECS Transactions. 11:5-8
We present an optimized GaAs backside via etching process using optical emission spectrometry (OES) based end point detection for capacitor on via circuit topology. A strong and repeatable end point was observed using the 416.8 nm Gallium by-product
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::949cb9cc76ec946e7545cc0fa6899fb9
https://doi.org/10.1149/1.2783850
https://doi.org/10.1149/1.2783850
Autor:
N. Cohen, Khanh Thai, Vipul J. Patel, E. Kaneshiro, Daniel Ching, J. Chen, Augusto Gutierrez-Aitken, Peter Nam, Kelly Hennig, Bert K. Oyama, Patty Chang-Chien, Dennis W. Scott
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Gigahertz-rate Digital-to-Analog Converters (DACs) have become readily available from several commercial vendors but have been unable to achieve >70 dB spurious-free dynamic range (SFDR) performance over a wide bandwidth (≥500MHz). This paper prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8543af0a6f7887fab08e403f52a1d222
https://doi.org/10.1109/csics.2012.6340082
https://doi.org/10.1109/csics.2012.6340082
Autor:
Khanh Thai, Dennis W. Scott, Joe Zhou, Kelly Hennig, Peter Nam, Reynold Kagiwada, Randy Sandhu, Bert K. Oyama, Aaron K. Oki, Augusto Gutierrez-Aitken, Wen Phan, Patty Chang-Chien, Ben Poust, Craig Geiger, E. Kaneshiro, Neir Cohen, Daniel Ching, Matthew Parlee
Publikováno v:
2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Northrop Grumman Aerospace Systems (NGAS) is developing an Advanced Heterogeneous Integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program. The obj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5336033ee53febd87e75d20d39f92a77
https://doi.org/10.1109/csics.2010.5619667
https://doi.org/10.1109/csics.2010.5619667
Autor:
Craig Geiger, Augusto Gutierrez-Aitken, Joe Zhou, Peter Nam, Dennis W. Scott, Matthew Parlee, B. Oyama, Ben Poust, Wen Phan, Patty Chang-Chien, Kelly Hennig, Reynold Kagiwada, Khanh Thai, Randy Sandhu, Aaron K. Oki
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
Northrop Grumman Space Technology (NGST) is developing an Advanced Heterogeneous Integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program. The obje
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5e465d163a50b2b9eb0abac862dad8
https://doi.org/10.1109/mwsym.2009.5165895
https://doi.org/10.1109/mwsym.2009.5165895
Autor:
J. Wang, A. Gutierrez, S. Lin, M. D'Amore, D. Li, Dennis Scott, K. Sato, B. Chan, D. Pascua, B. Oyama, M. Truong, P. C. Chang, Cedric Monier, E. Kaneshiro, Aaron Oki, Vesna Radisic, R. Sandhu, L. Dang, Abdullah Cavus, Peter Nam
Publikováno v:
2009 IEEE International Conference on Indium Phosphide & Related Materials.
We report an advanced InP/InGaAs double heterojunction bipolar transistor technology using aggressive scaling in device layout and epitaxial stack. The device employs a 220A highly doped base and a 1200A collector designed to support current densitie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ffc7e95225aae1e3e64fb8d30f8ddd3
https://doi.org/10.1109/iciprm.2009.5012410
https://doi.org/10.1109/iciprm.2009.5012410
Autor:
Patty Chang-Chien, Dennis W. Scott, Wen Phan, B. Oyama, Peter Nam, Augusto Gutierrez-Aitken, Khanh Thai, R. Sandhu, Kelly Tornquist, Joe Zhou
Publikováno v:
MRS Proceedings. 1068
To meet increasingly challenging and complex systems requirements, it is not enough to use one single semiconductor technology but to integrate several high performance technologies in an efficient and cost effective way. Heterogeneous integration (H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b5b45541a1fe9f04e231fca50fe04e1
https://doi.org/10.1557/proc-1068-c02-02
https://doi.org/10.1557/proc-1068-c02-02
Autor:
C.H. Lin, Michael E. Barsky, M. Y. Nishimoto, M. Lange, T.P. Chin, Y.C. Chou, Richard Lai, Aaron K. Oki, Peter Nam, Jeffrey M. Yang, J.B. Boos, Nicolas A. Papanicolaou, J. Lee, A. Gutierrez, Mike Wojtowicz, B. R. Bennett, Roger S. Tsai
Publikováno v:
2007 IEEE Compound Semiconductor Integrated Circuits Symposium.
A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ba968e183d62206c094636c3d34d7e
https://doi.org/10.1109/csics07.2007.48
https://doi.org/10.1109/csics07.2007.48