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pro vyhledávání: '"Peter Madakson"'
Autor:
Peter Madakson
Publikováno v:
Journal of Applied Physics. 70:1374-1379
The effects of interdiffusion and microstructure on the hardness and resistivity of Cr/Cu/Co/Au thin films were studied at temperatures ranging from 25 to 600 °C. Cobalt was found to be a very effective diffusion barrier between Cu and Au at tempera
Autor:
Peter Madakson
Publikováno v:
Journal of Applied Physics. 70:1380-1384
Empirical equations have been derived that relate resistivity to diffusivity and activation energies for thin films. Results for the Cr/Au structure agree with published data on the interdiffusion of Cr and Au thin films at temperatures ranging from
Autor:
Joyce C. Liu, Peter Madakson
Publikováno v:
Journal of Applied Physics. 68:2121-2126
The interdiffusion and resistivity of Cu/Au, Cu/Co, Co/Au, and Cu/Co/Au thin‐film structures were studied, at temperatures ranging from 25 to 550 °C, using Rutherford backscattering spectroscopy, Auger analysis, and four‐point probe resistance m
Publikováno v:
Journal of Applied Physics. 67:4053-4059
A buried layer of GaAs was formed in single‐crystal silicon by dual implantation of extremely high doses of As+ plus Ga+ at 200 keV, followed by furnace annealing. The layer consists of polycrystalline grains with random orientation. Rapid thermal
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 45:618-621
Thin diamondlike films, deposited on (100) Si, have been examined by electron energy loss spectroscopy (EELS), Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis. Results indicate that films deposited at high partial pressures
Autor:
Peter Madakson, John Bruley
Publikováno v:
Applied Physics Letters. 57:1126-1128
Detailed analysis of a buried layer of GaAs in 〈100〉 Si was carried out using electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling. The layer was formed by 200 keV dual ion implantation of Ga plus As ions,
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 45:216-218
The diffusion of Si in thin films of photoresist during silylation was investigated using Rutherford backscattering spectroscopy (RBS) and the chemical reaction was studied by X-ray photoemission spectroscopy (XPS). Initially, Si diffuses very rapidl
Autor:
Gregory John Clark, Roger H. Koch, Robert B. Laibowitz, Francoise K. LeGoues, A. D. Marwick, Peter Madakson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 32:405-411
The discovery of a class of oxides showing superconducting properties at temperatures of 38 K. and above has generated intense interest. We have studied the effects of ion implantation into thin films consisting largely of one of these oxides, YBa 2
Autor:
Peter Madakson
Publikováno v:
Materials Science and Engineering. 90:205-212
The high temperature oxidation of ion-implanted titanium was studied using the scanning electron microscopy, X-ray photoelectron spectroscopy and Rutherford back-scattering techniques. The specimens were implanted with either tin ions (Sn + ) or nitr
Autor:
Peter Madakson
Publikováno v:
Materials Science and Engineering. 90:287-290
Nitrogen was implanted into 18W4Cr1V bearing steel (where the composition is in approximate weight per cent) to doses of 1014−1017 ions cm−2 at 400 keV. The specimens were analyzed using the Rutherford backscattering and the X-ray photoelec