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pro vyhledávání: '"Peter M.O. Goldman"'
Publikováno v:
Applied Physics Letters. 87:071104
We report on metalorganic vapor-phase epitaxy growth optimization and properties of highly strained InGaAs∕GaAs quantum-well (QW) structures with emission wavelength beyond 1200 nm. It is observed that a sufficiently high V/III ratio in combination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9162db814afb8ad52eb7cd2d1cb883b3
https://doi.org/10.1063/1.2010615
https://doi.org/10.1063/1.2010615
