Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Peter M. Kopalidis"'
Autor:
Zhimin Wan, Peter M. Kopalidis
Publikováno v:
AIP Conference Proceedings.
A novel inductively coupled RF plasma ion source has been developed for use in a beamline ion implanter. Ion density data have been taken with an array of four Langmuir probes spaced equally at the source extraction arc slit. These provide ion densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d274413bdb81dc459ccadb7faf999fb8
https://doi.org/10.1063/1.4766552
https://doi.org/10.1063/1.4766552
Autor:
Peter M. Kopalidis, Zhimin Wan, Erik Collart, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
Low energy implant process data are presented from a dual mode high current ion implanter. The iPulsar is a flexible single wafer implanter capable of running both ribbon beams with one‐dimensional mechanical scan of the wafer and spot beams with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0282e83095d98f2aa55b8a61e2a5444d
https://doi.org/10.1063/1.3548414
https://doi.org/10.1063/1.3548414
Autor:
Peter M. Kopalidis, Jacob Jorne
Publikováno v:
Journal of The Electrochemical Society. 140:3037-3045
A mathematical model of a showerhead‐type reactive ion etching reactor using chemistry is developed. Experimental measurements of the plasma density, electron energy, and exit gas composition are used to provide information on the gas‐phase react
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d62b65a72a44bbbdc5a706d4a51584f2
https://doi.org/10.1149/1.2220954
https://doi.org/10.1149/1.2220954
Publikováno v:
Journal of Applied Physics. 71:4959-4965
In the course of practical usage, amorphous optical data storage media are subject to multiple write‐erase cycles. The laser heating that this entails can result in an appreciable change in material properties including those relevant to data recor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c468035d9b2cd4c2d45b4971b89683
https://doi.org/10.1063/1.350593
https://doi.org/10.1063/1.350593
Autor:
Jacob Jorne, Peter M. Kopalidis
Publikováno v:
Journal of The Electrochemical Society. 139:839-844
The reactive ion etching of silicon in SF 6 /O 2 mixtures is investigated experimentally. Electrical measurements, using a Langmuir probe, provide the plasma density of the discharge, for various settings of pressure and oxygen percentage. The plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f560277a0bd7ef216ea38c9bb6fb608
https://doi.org/10.1149/1.2069313
https://doi.org/10.1149/1.2069313
Publikováno v:
MRS Proceedings. 810
During high current ion implantation into photoresist-covered substrates, evolution of gaseous by-products of photoresist breakdown occurs that can affect the dose control of the process as well as diffusion and activation of the implanted dopants in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5719ba504489c64a78de908e35960a0
https://doi.org/10.1557/proc-810-c7.5
https://doi.org/10.1557/proc-810-c7.5
Publikováno v:
Journal of The Electrochemical Society. 152:G375
Photoresist outgassing during low energy ion implantation can affect the dosimetry of the process as well as the distribution of implanted dopants in the silicon substrate. The gaseous by-products of photoresist breakdowncan become entrapped in the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0c463f185083e612d63e670b0e0890f
https://doi.org/10.1149/1.1885405
https://doi.org/10.1149/1.1885405
Publikováno v:
Journal of The Electrochemical Society. 152:G623
Low-energy arsenic implants used in the formation of ultrashallow junctions are characterized on a high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the arsenic dimer ion (As + 2 ) for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18c064850bbe270741655518fcb76935
https://doi.org/10.1149/1.1945728
https://doi.org/10.1149/1.1945728
Publikováno v:
ResearcherID
The dry etching of aluminum layers for subhalf-micron technologies in a transformer coupled plasma etcher is investigated. Characterization of the system is performed in terms of etch rate, self-bias voltage, resist selectivity, and underlying oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3dc5fb8671b7e6c8f167cb55fdfc9f71
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996UK93000055&KeyUID=WOS:A1996UK93000055
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996UK93000055&KeyUID=WOS:A1996UK93000055
