Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Peter M. Fryer"'
Autor:
Bruno Michel, Peter M. Fryer, Ronald W. Nunes, Emmanuel Delamarche, James Vichiconti, Heinz Schmid, Eugene J. O'Sullivan, W. Graham, Heiko Wolf, Paul A. Andry, John C. Flake, Matthias Geissler, Robert L. Wisnieff
Publikováno v:
Langmuir. 19:5923-5935
The thin-film transistor (TFT) array of liquid-crystal displays (LCDs) comprises a number of metallic, semiconducting, and insulating layers, which need to be deposited and patterned accurately with very high yields on a (large) glass substrate. We a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3057dcd6d66c4baceb0d5935d669b71
https://doi.org/10.1021/la0341714
https://doi.org/10.1021/la0341714
Publikováno v:
Chemistry and Biochemistry Publications
We report a procedure that uses microcontact printing and wet chemical etching to fabricate patterned films of indium tin oxide (ITO) and indium zinc oxide (IZO). The procedure consists of three steps: (1) inking a patterned elastomeric stamp with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69a95223c4775b10602e927f4033d749
https://doi.org/10.1021/la015543g
https://doi.org/10.1021/la015543g
Publikováno v:
Journal of Applied Physics. 71:5433-5444
The interaction of Cu with Si separated by thin (50 nm) layers of tantalum, Ta2N, and a nitrogen alloy of Ta has been investigated to determine the factors that affect the success of these materials as diffusion barriers to copper. Intermixing in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85bf79d805ac36927ae1560c942c715e
https://doi.org/10.1063/1.350566
https://doi.org/10.1063/1.350566
Autor:
Karen Holloway, Peter M. Fryer
Publikováno v:
Applied Physics Letters. 57:1736-1738
We have investigated the effectiveness and failure mechanism of thin tantalum layers as diffusion barriers to copper. 50 nm tantalum films were sputtered onto unpatterned single‐crystal 〈100〉 Si wafers and overlaid with 100 nm Cu. Material reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3955a568869daa36c70b7aca6f51ac19
https://doi.org/10.1063/1.104051
https://doi.org/10.1063/1.104051
Publikováno v:
Applied Physics Letters. 56:2519-2521
We demonstrate remarkably rapid oxidation of (100) silicon at room temperature catalyzed by the presence of Cu3Si. Thermal oxidation of Si is normally carried out at temperatures above 700 °C. Oxidation of many metal silicides occurs more rapidly th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1297e9d17b8c1a9a34de43aa6e9460cd
https://doi.org/10.1063/1.103260
https://doi.org/10.1063/1.103260
Publikováno v:
MRS Proceedings. 187
We demonstrate remarkably rapid oxidation of (100) silicon at room temperature catalyzed by the presence of Cu3Si. Thermal oxidation of Si is normally carried out at temperatures above 700°C. Oxidation of many metal silicides occurs more rapidly tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::514f239c9bc475b66be78c1f7e71cae3
https://doi.org/10.1557/proc-187-107
https://doi.org/10.1557/proc-187-107
Autor:
Peter M. Fryer, Karen Holloway
Publikováno v:
MRS Proceedings. 181
We have investigated the effectiveness of thin tantalum layers as diffusion barriers to copper. Fifty nm Ta films were sputtered onto unpatterned single crystal Si wafers and overlaid with 100 nm Cu. Material reactions in these films were followed as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb5dae5262369bed78b829ca3e0dd241
https://doi.org/10.1557/proc-181-41
https://doi.org/10.1557/proc-181-41
Publikováno v:
Journal of The Electrochemical Society. 132:2240-2245
La reaction Ti-Si est complexe. L'environnement dans lequel la reaction est menee, influence beaucoup la reaction. L'etape initiale de la reaction a lieu rapidement. Le stade final commence quand la phase siliciure et la phase de l'espece ambiante in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482d7dcbd4955c40012e0b4be0467a75
https://doi.org/10.1149/1.2114328
https://doi.org/10.1149/1.2114328
Autor:
John L. Staples, Steven L. Wright, H. Ifill, Robert L. Wisnieff, Kevin Wilson Warren, J. Wilson, Robert Wayne Nywening, M.B. Rothwell, Eileen A. Galligan, Paul F. Greier, Paul Matthew Alt, Richard I. Kaufman, Richard A. John, Robert J. Polastre, C. G. Powell, Yue Kuo, Leslie Charles Jenkins, Evan G. Colgan, John J. Ritsko, Alphonso P. Lanzetta, Steve Millman, Peter M. Fryer, R. A. Rand, Frank R. Libsch, Shui-Chih Lien, R. Horton, Kenneth F. Latzko, W. Graham
Publikováno v:
Scopus-Elsevier
A 157-dot-per-inch, 262K-color, 10.5-in.- diagonal, 1280 × 1024 (SXGA) display has been fabricated using a six-mask process with Cu or Al-alloy thin-film gates. The combination of high resolution and gray-scale accuracy has been shown to render colo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::587421939dee7ff4411159c7147ada68
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032068579&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032068579&partnerID=MN8TOARS
Autor:
Evan G. Colgan, Eileen A. Galligan, Peter M. Fryer, W. Graham, Yue Kuo, Robert L. Wisnieff, Steven L. Wright, Leslie Charles Jenkins, D. Hunt, J. Wilson, Robert Wayne Nywening, M. E. Rothwell, R. Horton, Robert J. Polastre, A. Lien, Kenneth F. Latzko, Richard A. John, P. Koke, Frank R. Libsch
Publikováno v:
Scopus-Elsevier
— A novel reduced mask process is used to fabricate high-resolution high-aperture-ratio 10.5-in. SXGA (1280 × 1024) displays. The process uses copper gate-metallurgy with redundancy, without the need for extra processing steps. The resulting displ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::462c4c981906ac9bd2d03c3cced911ad
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030682561&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030682561&partnerID=MN8TOARS