Zobrazeno 1 - 10
of 402
pro vyhledávání: '"Peter M. Asbeck"'
Publikováno v:
IEEE Journal of Microwaves, Vol 1, Iss 1, Pp 299-316 (2021)
The next-generation 5G and beyond-5G wireless systems have stimulated a substantial growth in research, development, and deployment of mm-Wave electronic systems and antenna arrays at various scales. It is also envisioned that large dynamic range mod
Externí odkaz:
https://doaj.org/article/d8e33a4b295a45e5abd7a75aa518d42c
Autor:
Jie Min, Peter M. Asbeck
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 18-26 (2017)
In this paper, distributed effects along the channel are investigated for 2-D vertical tunnel FETs by developing a model based on a succession of unit cells along the channel, each of which includes lateral FET conduction and vertical tunnel conducti
Externí odkaz:
https://doaj.org/article/023cf5b1570b46b88765d1bc105375b0
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 6, Pp 416-423 (2016)
This paper provides an analysis of the intrinsic factors influencing the temperature dependence of the Id-Vds-Vgs characteristics of heterostructure Tunnel FETs based on GaSb/InAs tunneling junctions. The temperature dependence of energy bandgap, qua
Externí odkaz:
https://doaj.org/article/8b0ea32c18f846689b6b51ce518ef405
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 122-134 (2015)
Characteristics of heterostructure tunneling FETs (HTFETs) at microwave and mm-wave frequencies are reviewed, and their simulated performance in a variety of prototype circuits is presented. The results illustrate that HTFETs provide substantial bene
Externí odkaz:
https://doaj.org/article/ed0b676c91ce4ef2953fc848bdebe033
Publikováno v:
IEEE Transactions on Electron Devices. 70:963-970
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Autor:
Ah-Hyoung Lee, Patrick P. Mercier, Lawrence E. Larson, Jiannan Huang, Peter M. Asbeck, Arto V. Nurmikko, Jihun Lee, Stephen J. Shellhammer, Farah Laiwalla, Vincent W. Leung
Publikováno v:
Nature Electronics. 4:604-614
Multichannel electrophysiological sensors and stimulators—particularly those used to study the nervous system—are usually based on monolithic microelectrode arrays. However, the architecture of such arrays limits flexibility in electrode placemen
Publikováno v:
2022 Device Research Conference (DRC).
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:3099-3109
A review is presented of key power amplifier (PA) performance requirements for millimeter-wave 5G systems, along with a comparison of the potential of different semiconductor technologies for meeting those requirements. Output power, efficiency, and
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:1030-1038
A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end comprises a power amplifier (PA), a low-noise amplifier (LNA), an antenna switch, and appropriate passive matching and combining networks. In this paper, a synthe