Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Peter Lagger"'
Publikováno v:
Microelectronics Reliability. 82:62-83
Two particular defects are commonly discussed at the III-N interface: the required donor states, known to exist from the formation of the two-dimensional electron gas (2DEG) below a hetero-barrier, and defect states at the interface or within the die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a666867afc1a10d06e01c981870d08
https://doi.org/10.1016/j.microrel.2017.12.039
https://doi.org/10.1016/j.microrel.2017.12.039
Publikováno v:
IEEE Transactions on Electron Devices. 61:1022-1030
The transient recovery characteristics of the threshold voltage drift (ΔVth) of GaN-based HEMTs with a SiO2 gate dielectric induced by forward gate bias stress are systematically and comprehensively investigated for stress times from 100 ns to 10 ks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::964a7b2eb83e59a80e295f4260dfe4a4
https://doi.org/10.1109/ted.2014.2303853
https://doi.org/10.1109/ted.2014.2303853
Autor:
Sylvain Delage, Marie-Antoinette di Forte-Poisson, Gottfried Strasser, Erhard Kohn, A. Alexewicz, Clemens Ostermaier, Peter Lagger, Dionyz Pogany, Patrick Herfurth, D. Maier, Mohammed Alomari
Publikováno v:
Microelectronics Reliability. 52:1812-1815
We analyze the degradation of InAlN/GaN HEMTs using a secondary gate electrode placed on top of the SiN passivation layer in between the Schottky gate and drain contact. Although the actual transistor showed only minor degradation during the stress t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd0cdd86950bbe14b73c7a8ebfb8c6dc
https://doi.org/10.1016/j.microrel.2012.06.006
https://doi.org/10.1016/j.microrel.2012.06.006
Autor:
P. Steinschifter, Peter Lagger, Clemens Ostermaier, Dionyz Pogany, Maria Reiner, Gerhard Prechtl, Rudolf Pietschnig
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We report on AlGaN/GaN MIS-HEMTs with a thermally stable dielectric/AlGaN interface induced by plasma fluorination. The plasma treatment leads to a modification of the "native" surface donors and a fundamentally different device and defect behavior.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479288969a012564e22f064522d5734c
https://doi.org/10.1109/iedm.2015.7409834
https://doi.org/10.1109/iedm.2015.7409834
Autor:
Stefan Donsa, Maria Reiner, H. Mosslacher, H. Naharashi, Gerhard Prechtl, Clemens Ostermaier, Gregor Pobegen, Peter Lagger, Dionyz Pogany, P. Spreitzer, J. Mohamed
Publikováno v:
IRPS
Threshold voltage instabilities are investigated in GaN-based metal-insulator-semiconductor (MIS) high-electron-mobility-transistors (HEMTs) with specially designed on-wafer heaters structures. The heaters are based on metal lines or 2-dimensional el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98945ecd9d52d3be749393601d641f45
https://doi.org/10.1109/irps.2015.7112767
https://doi.org/10.1109/irps.2015.7112767
Publikováno v:
IEEE Electron Device Letters. 34:1112-1114
The very fast dynamics of threshold voltage drift (ΔVth) of GaN-based metal-insulator-semiconductor-HEMTs induced by forward gate bias stress is investigated with a simple oscilloscope based setup. We show that the logarithmic recovery time dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::863e11d3cc665b12a5d0006771400ca0
https://doi.org/10.1109/led.2013.2272095
https://doi.org/10.1109/led.2013.2272095
Publikováno v:
Applied Physics Letters. 110:173502
Exchange of carriers between the GaN channel and the dielectric/AlGaN interface in AlGaN/GaN metal insulator semiconductor high electron mobility transistors was recently attributed to a serial process of electron transport through the AlGaN barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9db08fea2ab05a6a5b5daef62b0203d1
https://doi.org/10.1063/1.4982231
https://doi.org/10.1063/1.4982231
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
An unexpected enhancement of V th drift (ΔV th ) in GaN MIS-HEMTs induced by repetitive forward gate bias stress pulses in contrast to single pulses is found. Further, it is revealed that the slope of ΔV th recovery curves decreases for increasing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c142044c881d33d9c09b4f2ba443c129
https://doi.org/10.1109/irps.2014.6861110
https://doi.org/10.1109/irps.2014.6861110
Publikováno v:
2012 International Electron Devices Meeting.
GaN-power HEMTs with insulated gate structure suffer from threshold voltage drifts (ΔV th ) under forward gate bias stress. We present a systematical approach to characterize the phenomenon and understand the dominant physical mechanisms causing thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9de0ac484dc834f1ecdb370e734d720e
https://doi.org/10.1109/iedm.2012.6479033
https://doi.org/10.1109/iedm.2012.6479033
Autor:
M. Oposich, Gottfried Strasser, O. Bethge, Peter Lagger, Dionyz Pogany, Mattia Capriotti, Clément Fleury, Clemens Ostermaier
Publikováno v:
Journal of Applied Physics. 117:024506
We provide theoretical and simulation analysis of the small signal response of SiO2/AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO2 interface is accumulated with free electrons. A lum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b1d6fe658cbdf74df0ee269bd945b6b
https://doi.org/10.1063/1.4905945
https://doi.org/10.1063/1.4905945