Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Peter L. Kellerman"'
Publikováno v:
IEEE Transactions on Plasma Science. 31:369-376
A Faraday cup dosimetry system was developed and characterized to address the issues of plasma immersion ion implantation (PIII) dose measurements. Pure ion current was measured by using an electrostatic suppression mechanism combined with high-bandw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df38585f83d83e1507567ec1e4d0b5c1
https://doi.org/10.1109/tps.2003.813198
https://doi.org/10.1109/tps.2003.813198
Publikováno v:
Surface and Coatings Technology. 156:77-82
Charge control during the source-drain implants in the CMOS process is critical to avoid damage to the thin gate dielectric. PIII has always been touted as having good charge control, since the charge deposited on the gate during the implant pulse is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf9798636cc933fa23b5f2407571024a
https://doi.org/10.1016/s0257-8972(02)00126-3
https://doi.org/10.1016/s0257-8972(02)00126-3
Publikováno v:
Review of Scientific Instruments. 73:1153-1156
We present secondary electron yield and plasma enhancement factor data for silicon surfaces exposed to Ar, He, N2, O2, H2, and BF3 plasmas, for incident ion energies from 0.5–10 keV. A fiber-optic isolated Faraday cup was used to directly measure t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7987ecd75bbadc985bafdf0b5e958135
https://doi.org/10.1063/1.1431707
https://doi.org/10.1063/1.1431707
Autor:
Svetlana Radovanov, Antonella Cucchetti, Chris Campbell, Peter L. Kellerman, S. Falk, Frank Sinclair
Publikováno v:
AIP Conference Proceedings.
Recent developments in device architecture and the continuing search for tighter process control have driven the requirement for no energy contamination, high accuracy dose control, more precise angle control and peak dose rate control. The new high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18978b886912706fb331144b1f2c10d5
https://doi.org/10.1063/1.4766547
https://doi.org/10.1063/1.4766547
Publikováno v:
Review of Scientific Instruments. 73:834-836
Many applications of ion sources (e.g., ion implantation in the semiconductor industry) are very sensitive to particles and have tight specifications on allowable particle number and size. Among the sources of particles are the ion source itself (due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6416238b57cd563adc2a643a7661e9f5
https://doi.org/10.1063/1.1431705
https://doi.org/10.1063/1.1431705
Measurement and analysis of deposition-etch characteristics of BF3 plasma immersion ion implantation
Publikováno v:
Review of Scientific Instruments. 73:840-842
The deposition-etch characteristics of BF3 plasmas were quantitatively measured and analyzed using a deposition monitor, and were correlated with plasma parameters. It was found that by controlling pressure and rf power, the source could be operated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53349ad82f6e7c2981d8b788089f59ca
https://doi.org/10.1063/1.1427353
https://doi.org/10.1063/1.1427353
Publikováno v:
Review of Scientific Instruments. 73:837-839
In plasma immersion ion implantation, the wafer is negatively pulsed while immersed in a dc ambient plasma. During this high voltage pulse, the sheath expands, and plasma ions are accelerated to the wafer. The essential character of this plasma sheat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc4dbda3a91c9f918da08a65c3be235e
https://doi.org/10.1063/1.1431706
https://doi.org/10.1063/1.1431706
Autor:
Peter L. Kellerman, Sinclair Frank
Publikováno v:
AIP Conference Proceedings.
A computer model capable of analyzing electrostatic lenses, including the effects of space charge, yet simple enough to run an entire beamline system calculation in seconds, has been developed and applied to VSEA’s latest high current beamline. Suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3e1a7b0ec91e1facc608a60062eb32f
https://doi.org/10.1063/1.2401544
https://doi.org/10.1063/1.2401544
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
Much has been published recently stating the effectiveness of plasma immersion ion implantation (PIII) in producing ultra-shallow junctions (USJ). Although PIII is capable of producing USJ implants as effectively as conventional mass-analyzed ion imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a92d57ae5233ff729d0cf36ad328e6c9
https://doi.org/10.1109/iit.2000.924193
https://doi.org/10.1109/iit.2000.924193