Zobrazeno 1 - 10
of 259
pro vyhledávání: '"Peter Kordos"'
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 4, Iss 2, Pp 67-70 (2005)
Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs) for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated S
Externí odkaz:
https://doaj.org/article/06f854aee8e64f7cbc3ef29cba35dddf
Autor:
Martin Mikulics, Zdeněk Sofer, Dagmar Gregušová, Hilde Hardtdegen, Š. Gaži, Peter Kordos, Jozef Novák, Joachim Mayer
Publikováno v:
Semiconductor science and technology 36(9), 095040-(2021). doi:10.1088/1361-6641/ac1a28
We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6524d82c467056d596c698c16841824
https://hdl.handle.net/2128/28583
https://hdl.handle.net/2128/28583
Autor:
Martin Mikulics, Hans Lüth, A. Fox, Hilde Hardtdegen, Peter Kordos, Zdeněk Sofer, Martin Kocan
Publikováno v:
Applied Materials Today. 7:134-137
In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silver substrates by a novel “combined” two-step epitaxial procedure based on metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE
Autor:
Matej Mičušík, L. Valik, Ján Greguš, F. Gucmann, Peter Kordos, Dagmar Gregušová, M. Blaho, Roman Stoklas, Róbert Kúdela
Publikováno v:
Applied Surface Science. 395:140-144
GaAs-based heterostructures exhibit excellent carrier transport properties, mainly the high carrier velocity. An AlGaAs-GaAs heterostructure field-effect transistor (HFET) with an InGaAs channel was prepared using metal-organic chemical vapor deposit
Autor:
St. Trellenkamp, Hilde Hardtdegen, A. Winden, J. Moers, Dagmar Gregušová, Martin Mikulics, Peter Kordos, Joachim Mayer, Zdeněk Sofer
Publikováno v:
Applied physics letters 118(4), 043101-(2021). doi:10.1063/5.0038070
A local so-called laser-micro-annealing (LMA) conditioning technology, which is suitable for the fabrication of a large range of hybrid nano-optoelectronic devices, was applied to III-nitride-based nano-light emitting diodes (LEDs). The LEDs with a d
Autor:
Hilde Hardtdegen, Martin Mikulics, M. Marso, Detlev Grützmacher, Roman Adam, Hans Lüth, A. Fox, Peter Kordos, Roman Sobolewski, Martin Schuck
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
We developed a transfer and integration technique for freestanding Ge 1 Sb 2 Te 4 nano-membranes. A so-called laser micro annealing process for the precisely-local formation of low resistance Ge 1 Sb 2 Te 4 /Ti/Au ohmic contacts was optimized. Ultraf
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
This work deals with the trap analysis of the GaN-based structures using current time response on the voltage pulse applied to Schottky and ohmic contacts containing AlGaN and InAlN layers with different composition and thickness. Monitoring of the c
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
We fabricated and tested hybrid-III-nitride (CdSe nanocrystal/p-GaN/MQW/n-GaN/sapphire) based nano-LEDs and integrated them into a device layout suitable for DC testing and designed for future operation at high frequencies. Our studies provide clear
Autor:
Hans Lüth, Martin Kocan, Detlev Grützmacher, M. Marso, Peter Kordos, A. Fox, Zdeněk Sofer, Martin Mikulics, J. Schubert, Hilde Hardtdegen
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
We developed a novel "combined" two-step epitaxial procedure based on MO VP E and MB E for an optimized growth of group III-nitride layers on silver-metallic substrates. The AlGaN/GaN/AlN heterostructures were used for the fabrication of HFETs. The e
Autor:
M. Jurkovič, Peter Kordos, Oliver Hilt, J. Fedor, Joachim Würfl, Frank Brunner, Melani Cho, Dagmar Gregušová, Jan Kuzmik, Karol Fröhlich, S. Hascik, M. Blaho
Publikováno v:
Microelectronic Engineering. 112:204-207
HighlightsThe metal-oxide gate stack was realized by a single photolitographic step.Low temperature ALD Al2O3 layer was used for MOS gate stack.Plasma enhancement and thermal modes were compared.MOS devices were evaluated by DC, pulse and C-V measure