Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Peter Kaspar"'
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Accurate detection of semiconductor defects is crucial to ensure reliability of operation and to improve yield by understanding and eradicating yield detractors. Recent advances in computer vision driven by Deep Convolutional Neural Networks (DCNN) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cf2f8900f51a35264462550bf6796c6
https://doi.org/10.1109/asmc51741.2021.9435657
https://doi.org/10.1109/asmc51741.2021.9435657
Autor:
Peter Kaspar
Das Sehnsuchtsland der Deutschen aus einer anderen Perspektive betrachtet, nämlich im Spiegel von Begegnungen, Menschen und Situationen – mal urkomisch, mal ernst und nachdenklich, mal klischeebehaftet, mal ganz und gar unerwartet. In zehn Etappen
Autor:
P. Jenneve, Guilhem de Valicourt, Marc Rensing, Peter O'Brien, Chirstophe Jany, Christophe Kopp, Cormac Eason, Guang-Hua Duan, Alain Accard, Dalila Make, M. A. Mestre, Peter Kaspar, Francois Lelarge, Nicola Pavarelli, Stephane Malhouitre, Romain Brenot, Sylvie Menezo, Segolene Olivier
Publikováno v:
IEEE Photonics Technology Letters. 27:2383-2386
A hybrid III-V/silicon semiconductor optical amplifier (SOA) is presented, which shows a maximum fiber-to-fiber gain of 10 dB and a maximum internal gain around 28 ± 2 dB. The device was fabricated from III-V material wafer-bonded onto a silicon-on-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3ba5e7f399f35757d2680ab31fa29be
https://doi.org/10.1109/lpt.2015.2466543
https://doi.org/10.1109/lpt.2015.2466543
Autor:
Segolene Olivier, Philippe Charbonnier, Francois Lelarge, Guilhem de Valicourt, Alain Accard, Nils Girard, Christophe Jany, Stephane Malhouitre, Harry Gariah, Dalila Make, Alexandre Shen, Alban Le Liepvre, Jean-Louis Gentner, Christophe Kopp, Guillaume Levaufre, Karen Ribaud, Peter Kaspar, Guang-Hua Duan, Franck Mallecot
Publikováno v:
Journal of Lightwave Technology. 33:976-983
Recent advances on hybrid III–V/Si lasers and semiconductor optical amplifiers using wafer bonding are reported. Hybrid optical amplifiers exhibit 28 dB internal gain, 9 dBm saturation power in the output silicon waveguide, and 10–11 dB of intern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebc9f5f171c25ad2bd00a97cc4fa8d0a
https://doi.org/10.1109/jlt.2014.2376174
https://doi.org/10.1109/jlt.2014.2376174
Autor:
S. Messaoudene, Alban Le Liepvre, Guilhem de Valicourt, Marco Lamponi, Alain Accard, Dries Van Thourhout, Graham T. Reed, Damien Bordel, Nils Girard, Christophe Jany, Jean-Marc Fedeli, Peter Kaspar, Badhise Ben Bakir, Guang-Hua Duan, Guillaume Levaufre, Antoine Descos, Sylvie Menezo, Gunter Roelkens, Frederic Y. Gardes, Dalila Make, Shahram Keyvaninia, Francois Lelarge, David J. Thomson
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:158-170
This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1838128000cc022ca80da254e65e780f
https://doi.org/10.1109/jstqe.2013.2296752
https://doi.org/10.1109/jstqe.2013.2296752
Autor:
Ping Ma, Jérôme Faist, Heinz Jäckel, Peter Kaspar, M. Beck, R. Kappeler, Yuriy Fedoryshyn, Jonathan F. Holzman
Publikováno v:
IEEE Journal of Quantum Electronics. 48:885-890
We report on ultra-fast intersubband transitions in strained coupled double InGaAs/AlAs/AlAsSb quantum wells in terms of modeling, fabrication, and characterization of the structures. Our experimental results demonstrate the capability of the studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13f4f8868ddff4dd9ecf8f51f6e4613f
https://doi.org/10.1109/jqe.2012.2193558
https://doi.org/10.1109/jqe.2012.2193558
Publikováno v:
Journal of Lightwave Technology. 29:3156-3166
Substrate-type planar 2-D photonic crystal (PhC) waveguides suffer from large experimental propagation losses compared to membrane-type PhC waveguides. Numerical simulations can give insight into the quantitative contribution to the propagation losse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c4b83c89a2eede7b21e415eb135097
https://doi.org/10.1109/jlt.2011.2167218
https://doi.org/10.1109/jlt.2011.2167218
Publikováno v:
Photonics and Nanostructures - Fundamentals and Applications. 9:235-247
Identifying the origins of the large propagation losses in substrate-type photonic crystal waveguides and subsequently reducing them by means of structural optimization requires a numerical model, which is flexible and accurate enough to allow a quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::791f3956c3274fa6af52eca2ea2f66db
https://doi.org/10.1016/j.photonics.2011.03.002
https://doi.org/10.1016/j.photonics.2011.03.002
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:1179-1186
A cyclic approach to silicon nitride dry-etching is presented, which differs in concept from most established high aspect ratio etching processes. Alternating steps of CHF3 etching and oxygen plasma treatment are applied to form vertical sidewalls. D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7267aed7b777ab9353103cacee19e725
https://doi.org/10.1116/1.3501120
https://doi.org/10.1116/1.3501120
Autor:
Romain Brenot, Segolene Olivier, Jean-Guy Provost, Nils Girard, Alain Accard, Dalila Make, Frederic van Dijk, M. Faugeron, Ghaya Baili, Stephan Malhouitre, Daniel Dolfi, Pascale Nouchi, Guang-Hua Duan, Peter Kaspar, Christophe Kopp
Publikováno v:
2015 International Topical Meeting on Microwave Photonics (MWP).
Using a gain saturated SOA as a high-pass filter, we reduce the intensity noise of a hybrid III-V/Silicon laser by 8 dB around the relaxation oscillation frequency and up to 12dB around 100MHz leading to a Relative Intensity Noise (RIN) below −145
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c9c04a8660982bdb750b0617b8d517
https://doi.org/10.1109/mwp.2015.7356705
https://doi.org/10.1109/mwp.2015.7356705