Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Peter J. Zampardi"'
Autor:
Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi, Lorenzo Codecasa
Publikováno v:
Energies, Vol 15, Iss 15, p 5457 (2022)
This paper presents a comprehensive overview of nonlinear thermal effects in bipolar transistors under static conditions. The influence of these effects on the thermal resistance is theoretically explained and analytically modeled using the single-se
Externí odkaz:
https://doaj.org/article/dc07cc77f8e74b3bae0ec6f37d44ff6b
Autor:
Peter J. Zampardi
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::661dc4f5b51f0e566a61bf11ee44983e
https://doi.org/10.1109/bcicts50416.2021.9682210
https://doi.org/10.1109/bcicts50416.2021.9682210
Autor:
Faramarz Kharabi, Peter J. Zampardi
Publikováno v:
IEEE Transactions on Electron Devices. 66:28-33
This paper presents a commercial or industrial view of III–V compact models for circuit design. We contrast the requirements of III–V modeling to those of silicon. The differences in requirements are strongly rooted in the applications that III
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c532829d57a99af4c88206f586de9d
https://doi.org/10.1109/ted.2018.2884153
https://doi.org/10.1109/ted.2018.2884153
Autor:
Jose-Ramon Perez-Cisneros, William Hallberg, Peter J. Zampardi, Koen Buisman, Dhecha Nopchinda
Publikováno v:
2021 96th ARFTG Microwave Measurement Conference (ARFTG).
A method to emulate multi-stage power amplifier (PA) architectures is presented. The technique predicts multistage PA performance. The method is based on an iterative procedure using transistor/branch PA active load-pull measurements to include inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2641be31636241ea27a384ebc026897e
https://doi.org/10.1109/arftg49670.2021.9425107
https://doi.org/10.1109/arftg49670.2021.9425107
Autor:
Jose-Ramon Perez-Cisneros, Peter J. Zampardi, William Hallberg, Dhecha Nopchinda, Koen Buisman
Publikováno v:
2021 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR).
A method to emulate differential transmitter architectures is presented. The technique, which is based on mixed-mode active load-pull measurements, predicts power amplifier (PA) performance while avoiding the need to manufacture the complete PA. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb61e41fd9cd12fa0078af7b9456c0cd
https://doi.org/10.1109/pawr51852.2021.9375580
https://doi.org/10.1109/pawr51852.2021.9375580
Autor:
Antonio Pio Catalano, Peter J. Zampardi, Vincenzo d'Alessandro, Lorenzo Codecasa, Ciro Scognamillo
Publikováno v:
Electronics, Vol 10, Iss 757, p 757 (2021)
Electronics
Volume 10
Issue 6
Electronics
Volume 10
Issue 6
In this paper, the dc electrothermal behavior of InGaP/GaAs HBT test devices and arrays for power amplifier output stages is extensively analyzed through an efficient simulation approach. The approach relies on a full circuit representation of the do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76e85e28f575c03952b326edf3b547e6
http://hdl.handle.net/11588/869107
http://hdl.handle.net/11588/869107
Autor:
Vincenzo d'Alessandro, Brian Moser, Antonio Pio Catalano, Peter J. Zampardi, Lorenzo Codecasa, Niccolò Rinaldi, Alessandro Magnani
Publikováno v:
Microelectronics Reliability. 78:233-242
This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs HBTs for handset applications in a laminate (package) environment. Both wire-bonding and flip-chip technologies are examined. The combination between an accurat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::726b2037bc8879ce963c89e1bda7726c
https://doi.org/10.1016/j.microrel.2017.09.011
https://doi.org/10.1016/j.microrel.2017.09.011
Determination of safe reliability region over temperature and current density for through wafer vias
Publikováno v:
Microelectronics Reliability. 68:5-12
Circular and slot backside vias are stressed over current and temperature and the resulting failure times are fitted to Black's equation. Contour plots of the FIT rate are generated and the reliability of circular and slot vias are compared. It is de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7645514512b78c0a085606c3bdcf3274
https://doi.org/10.1016/j.microrel.2016.09.011
https://doi.org/10.1016/j.microrel.2016.09.011
Autor:
Antonio Pio Catalano, Brian Moser, Lorenzo Codecasa, Peter J. Zampardi, Vincenzo d'Alessandro
This paper presents an extensive analysis aimed at quantifying the impact of all the key technology parameters on the upward heat flow in state‐of‐the‐art InGaP/GaAs heterojunction bipolar transistors (HBTs) for various emitter areas and shapes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f78369269a44c75d711c4907b48037f7
http://hdl.handle.net/11311/1120950
http://hdl.handle.net/11311/1120950