Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Peter J. Geiss"'
Publikováno v:
Journal of Materials Research. 8:467-472
Cobalt (Co)/silicon dioxide (SiO2) reactions during rapid thermal annealing (RTA) in an N2 ambient have been investigated. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that islands consisting of Co and the cobalt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5930790c765215be851884a4c387fdb9
https://doi.org/10.1557/jmr.1993.0467
https://doi.org/10.1557/jmr.1993.0467
Autor:
J. Rascoe, Ebenezer E. Eshun, Benjamin T. Voegeli, S. St Onge, Douglas D. Coolbaugh, P. Demag, Peter J. Geiss, Michael J. Zierak, Natalie B. Feilchenfeld, A. Norris, Bradley A. Orner, David C. Sheridan, J. Dunn, T. Larsen, J. Trappasso, J. He, J. Greco, R. Hussain, V. Patel, Michael L. Gautsch, V. Ramachandrian, Peter B. Gray, Wade J. Hodge, Douglas B. Hershberger, Ryan Wayne Wuthrich, Robert M. Rassel, Louis D. Lanzerotti, D. Jordan, Steven H. Voldman
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f876a1838dd55bdb0081b70fd81a5fef
https://doi.org/10.1109/bipol.2002.1042917
https://doi.org/10.1109/bipol.2002.1042917
Autor:
Gregory G. Freeman, Bradley A. Orner, S. Subbanna, Basanth Jagannathan, Robert A. Groves, Douglas D. Coolbaugh, Peter J. Geiss, J. Malinowski, S. St Onge, J. Jeng, M. Gordon, K. Stein, D. L. Harame, Douglas B. Hershberger, David C. Ahlgren, S. Kilpatrick, J. Dunn, Peter B. Gray, L. Lanzerotti, R. Johnson, Kathryn T. Schonenberg, Michael J. Zierak, Natalie B. Feilchenfeld, Alvin J. Joseph
Publikováno v:
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).
A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and chal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8abbecd624f03e242f5f04f857d6217b
https://doi.org/10.1109/bipol.1999.803539
https://doi.org/10.1109/bipol.1999.803539
Autor:
David C. Ahlgren, Gregory G. Freeman, Robert A. Groves, Jack O. Chu, Ryan Wayne Wuthrich, Kathryn T. Schonenberg, Z.X. He, Basanth Jagannathan, Peter J. Geiss, J. Malinowski, Louis D. Lanzerotti, Bradley A. Orner, J. Dunn, S. Subbanna, Mounir Meghelli, H. Chen, David Harame, Xuefeng Liu, K. Watson, Michael J. Zierak, Douglas D. Coolbaugh, Jeffrey B. Johnson, Vidhya Ramachandran, Peter B. Gray, R. Johnson, D. Jadus, Alvin J. Joseph, Alexander V. Rylyakov
Publikováno v:
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).
A BiCMOS technology is presented that integrates a high performance NPN (f/sub T/=120 GHz and f/sub max/=100 GHz), ASIC compatible 0.11 /spl mu/m L/sub eff/ CMOS, and a full suite of passive elements. Significant HBT performance enhancement compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7455b124b49f666e2bf90f72c13d7b1e
https://doi.org/10.1109/bipol.2001.957877
https://doi.org/10.1109/bipol.2001.957877
Publikováno v:
IEEE Transactions on Electron Devices; 1991, Vol. 38 Issue 2, p262-269, 8p
Publikováno v:
2014 IEEE International Reliability Physics Symposium; 2014, pEL.4.1-EL.4.6, 0p