Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Peter J Simpson"'
Autor:
John F Darby, Ewelina M Krysztofinska, Peter J Simpson, Aline C Simon, Pawel Leznicki, Newran Sriskandarajah, David S Bishop, Lisa R Hale, Caterina Alfano, Maria R Conte, Santiago Martínez-Lumbreras, Arjun Thapaliya, Stephen High, Rivka L Isaacson
Publikováno v:
PLoS ONE, Vol 9, Iss 11, p e113281 (2014)
The BAG6 complex resides in the cytosol and acts as a sorting point to target diverse hydrophobic protein substrates along their appropriate paths, including proteasomal degradation and ER membrane insertion. Composed of a trimeric complex of BAG6, T
Externí odkaz:
https://doaj.org/article/8e8a952f4dc54536822cf9d134d1aff8
Autor:
Julien R C Bergeron, Hendrik Huthoff, Dennis A Veselkov, Rebecca L Beavil, Peter J Simpson, Stephen J Matthews, Michael H Malim, Mark R Sanderson
Publikováno v:
PLoS Pathogens, Vol 6, Iss 6, p e1000925 (2010)
The HIV-1 viral infectivity factor (Vif) protein recruits an E3 ubiquitin ligase complex, comprising the cellular proteins elongin B and C (EloBC), cullin 5 (Cul5) and RING-box 2 (Rbx2), to the anti-viral proteins APOBEC3G (A3G) and APOBEC3F (A3F) an
Externí odkaz:
https://doaj.org/article/3f453db7a44343d28812f86e07f233db
Publikováno v:
Physics; Volume 4; Issue 2; Pages: 383-393
Ion implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc9b6900a835a8e68cf7bd5401d15851
https://doi.org/10.3390/physics4020025
https://doi.org/10.3390/physics4020025
Autor:
Matheus C. Adam, Nazban Darukhanawalla, James M. Gaudet, Guenevere O’Hara, Paige Harford, Greg Hall, Jozef Ociepa, Marc H. Weber, Peter J. Simpson, Lyudmila V. Goncharova
Publikováno v:
Surface Science. 723:122104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b02e16630bf25313f6b9ec2da42f7a
https://doi.org/10.1016/j.susc.2022.122104
https://doi.org/10.1016/j.susc.2022.122104
Autor:
Peter J. Simpson, Keith J. Nation
Publikováno v:
Engineering Psychology and Cognitive Ergonomics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c1424c1b30f5a3763463139ee4c85b9
https://doi.org/10.4324/9781315094489-36
https://doi.org/10.4324/9781315094489-36
Autor:
Jeffrey M. Warrender, Jeffrey M. Gaudet, Quentin Hudspeth, Peter J. Simpson, James Williams, Philippe K. Chow, Wenjie Yang, Naheed Ferdous, Michael J. Aziz, Austin Akey, Elif Ertekin
Publikováno v:
APL Materials, Vol 7, Iss 10, Pp 101124-101124-7 (2019)
Nanosecond pulsed laser melting can be used to rapidly recrystallize ion-implanted Si through liquid phase epitaxy. The rapid resolidification that follows the melting results in a supersaturation of impurities and hyperdopes the Si, inducing novel o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52e91cfefa7196a55c8b434fe8865ef5
https://doi.org/10.1063/1.5124709
https://doi.org/10.1063/1.5124709
Publikováno v:
Nanotechnology. 30:314003
Amorphous hydrogenated silicon carbonitride (a-SiCN:H) thin films were grown using electron cyclotron resonance chemical vapour deposition using a mixture of methane, nitrogen, and silane as precursors. The origin of the variation of macroscopic prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8111dfec4dd455064c340392fa3f579a
https://doi.org/10.1088/1361-6528/ab180c
https://doi.org/10.1088/1361-6528/ab180c
Publikováno v:
Journal of Energetic Materials. 27:145-165
In an attempt to overcome the inconsistencies of plastic explosive–filled shape charges in EOD operations we have explored the use of sensitized gelled nitromethane liquid as a filling for a number of shaped charge devices. The ability to penetrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::536b78c006fb31227afd6a6d93e8f95a
https://doi.org/10.1080/07370650802640317
https://doi.org/10.1080/07370650802640317
Autor:
Simon Ruffell, Andrew P. Knights, Peter J. Simpson, B. Terreault, K. J. Dudeck, François Schiettekatte, Martin Chicoine, Oussama Moutanabbir
Publikováno v:
Applied Surface Science. 255:63-67
Despite decades of study, voids in silicon produced by implantation of H or He followed by annealing continue to be a topic of interest. There are two key applications: gettering of heavy metal impurities, and “ion cutting” used in silicon-on-ins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::151a1902e0dbf2ba0dc6dbbe89199329
https://doi.org/10.1016/j.apsusc.2008.05.171
https://doi.org/10.1016/j.apsusc.2008.05.171
Autor:
Marc H. Weber, Peter J. Simpson, Svetlana Neretina, Dmytro Grebennikov, Kelvin G. Lynn, John S. Preston, Peter Mascher, Robert A. Hughes
Publikováno v:
physica status solidi c. 4:3659-3663
Cadmium Telluride (CdTe) is the most well established II–VI compound largely due to its use as a photonic material. Existing applications, as well as those under consideration, are demanding increasingly stringent control of the material properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cab95e63d6990119170291c20639c812
https://doi.org/10.1002/pssc.200675804
https://doi.org/10.1002/pssc.200675804