Zobrazeno 1 - 10
of 241
pro vyhledávání: '"Peter J Parbrook"'
Autor:
Muhammet Genc, Vitaly Z. Zubialevich, Abhinandan Hazarika, Peter J. Parbrook, Brian Corbett, Zhi Li
Publikováno v:
Advanced Photonics Research, Vol 4, Iss 12, Pp n/a-n/a (2023)
The success of silicon photonics is sparking widespread interest in photonic integrated circuits at visible light wavelengths using SiN and other waveguiding platforms. Compact active circuits desire the heterogeneous integration of GaN‐based laser
Externí odkaz:
https://doaj.org/article/b24d2d30759c4297a1e877160592c50a
Autor:
Peter Milner, Vitaly Z. Zubialevich, Thomas O'Connor, Sandeep M. Singh, Davinder Singh, Brian Corbett, Peter J. Parbrook
Publikováno v:
Electronics Letters, Vol 59, Iss 19, Pp n/a-n/a (2023)
Abstract In this work, the authors report the first demonstration of an ultraviolet light‐emitting diode (LED) with boron‐containing quantum wells (QWs). Secondary ion mass spectrometry measurements revealed a B concentration of 1% in the first Q
Externí odkaz:
https://doaj.org/article/a4650c7ae5654e4abb4e8b01c1e9e025
Autor:
Zhiheng Quan, Duc V. Dinh, Silvino Presa, Brendan Roycroft, Ann Foley, Mahbub Akhter, Donagh O'Mahony, Pleun P. Maaskant, Marian Caliebe, Ferdinand Scholz, Peter J. Parbrook, Brian Corbett
Publikováno v:
IEEE Photonics Journal, Vol 8, Iss 5, Pp 1-8 (2016)
Freestanding semipolar (11-22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50-μm-thick GaN layer grown on a patterned (
Externí odkaz:
https://doaj.org/article/a02a6ce3c09045719b85c0b27fcf65a9
Autor:
Ben Buse, Michael Kneissl, Tim Wernicke, Frank Mehnke, Lucia Spasevski, Daniel A. Hunter, Paul R. Edwards, Robert W. Martin, Johannes Enslin, Peter J. Parbrook, Humberto M. Foronda
Publikováno v:
Microscopy and Microanalysis. 27:696-704
Wavelength-dispersive X-ray (WDX) spectroscopy was used to measure silicon atom concentrations in the range 35–100 ppm [corresponding to (3–9) × 1018 cm−3] in doped AlxGa1–xN films using an electron probe microanalyser also equipped with a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bc9636cfb5e607a24cedc3a2295b75e
https://doi.org/10.1017/s1431927621000568
https://doi.org/10.1017/s1431927621000568
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga, Al)N-based photonic and electronic devices. The bandgaps and bandgap bowing parameters of III-nitrides across the full composition range are reviewed wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecbf4246d4b737f1cc907609d94f422c
http://link.springer.com/article/10.1038/s41598-020-73160-7
http://link.springer.com/article/10.1038/s41598-020-73160-7
Autor:
Vitaly Z. Zubialevich, Darragh Buckley, Colm O'Dwyer, Peter J. Parbrook, Farzan Gity, David McNulty, Saikumar Inguva, Paul K. Hurley
Publikováno v:
ECS Transactions. 98:151-158
Zinc oxide (ZnO) and Al-doped ZnO are important optoelectronic materials. ZnO in particular has a wide band gap (Eg ~ 3.3 eV at 300 K), large exciton binding energy (~66 meV) and especially for the variety of methods by which it can be processed. Mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b772daa47ad9e692518295b10e21cd78
https://doi.org/10.1149/09807.0151ecst
https://doi.org/10.1149/09807.0151ecst
Publikováno v:
Crystal Growth & Design. 20:3686-3700
Thermal annealing of top−down fabricated GaN nanocolumns (NCs) was investigated over a wide range of temperatures for ammonia-rich atmospheres of both nitrogen and hydrogen. It was found that in contrast to the annealing of planar GaN layers, where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cc2c11f16c3051f619cbfe2e2fcaaa2
https://doi.org/10.1021/acs.cgd.9b01656
https://doi.org/10.1021/acs.cgd.9b01656
Autor:
Lucia, Spasevski, Ben, Buse, Paul R, Edwards, Daniel A, Hunter, Johannes, Enslin, Humberto M, Foronda, Tim, Wernicke, Frank, Mehnke, Peter J, Parbrook, Michael, Kneissl, Robert W, Martin
Publikováno v:
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 27(4)
Wavelength-dispersive X-ray (WDX) spectroscopy was used to measure silicon atom concentrations in the range 35-100 ppm [corresponding to (3-9) × 1018 cm-3] in doped AlxGa1-xN films using an electron probe microanalyser also equipped with a cathodolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2a1a320e7c84f0e1b818b12194e15d52
https://pubmed.ncbi.nlm.nih.gov/34218838
https://pubmed.ncbi.nlm.nih.gov/34218838
Autor:
Josué Mena, Joan J. Carvajal, Vitaly Zubialevich, Peter J. Parbrook, Francesc Díaz, Magdalena Aguiló
Publikováno v:
Langmuir
Porous GaN epitaxial layers were prepared using single-step chemical vapor deposition (CVD) through the direct reaction of ammonia with gallium. The degree of porosity and pore diameters in the resulting GaN were analyzed by means of SEM and AFM and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db354fa747cf145558653b830ac2f76d
http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-190981
http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-190981
Autor:
Lucia Spasevski, Peter J. Parbrook, Pietro Pampili, Gunnar Kusch, Robert W. Martin, Vitaly Z. Zubialevich, Duc V. Dinh, Jochen Bruckbauer, Paul R. Edwards
With a view to supporting the development of ultra-violet light-emitting diodes and related devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga1-x N alloys are extensively compared. This study has been designed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cf484eadb12701d087377321f9e8b4e
https://www.repository.cam.ac.uk/handle/1810/311875
https://www.repository.cam.ac.uk/handle/1810/311875