Light emission from silicon with tin-containing nanocrystals

Autor: Søren Roesgaard, Jacques Chevallier, Peter I. Gaiduk, John Lundsgaard Hansen, Pia Bomholt Jensen, Arne Nylandsted Larsen, Axel Svane, Peter Balling, Brian Julsgaard

Publikováno v: AIP Advances, Vol 5, Iss 7, Pp 077114-077114-6 (2015)

Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 90

Externí odkaz: https://doaj.org/article/8f1de2ba40134b019ceabfd066790842

Formation of epitaxial 3C-SiC layers on Si by rapid vacuum thermal processing

Autor: Mikhail V. Lobanok, Stanislau L. Prakopyeu, Maksim A. Makhavikou, Olga V. Korolik, Peter I. Gaiduk

Publikováno v: Journal of the Belarusian State University. Physics. :79-86

The results of a study of the structure and phase composition of epitaxial layers of silicon carbide (SiC) formed on silicon substrate with orientation (100) under rapid vacuum thermal processing are presented. Planar-view transmission electron micro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bedf1e1e0565b8eb9ea9f1e71de7de62
https://doi.org/10.33581/2520-2243-2022-2-79-86

Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface

Autor: Arne Nylandsted Larsen, John Lundsgaard Hansen, R. R. Juluri, Peter I. Gaiduk, Brian Julsgaard

Publikováno v: Juluri, R R, Gaiduk, P, Hansen, J L, Larsen, A N & Julsgaard, B 2018, ' Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface ', Thin Solid Films, vol. 662, pp. 103-109 . https://doi.org/10.1016/j.tsf.2018.07.036

A comparative study is performed of the properties of SiC films, grown in the presence and absence of a Si1-xGex interfacial layer on top of a Si(111) substrate with x = 0.23. The SiC film growth is carried out at 960 degrees C by carbonization of th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f10e2a165d40ded2deed3f759d630ea9
https://doi.org/10.1016/j.tsf.2018.07.036

Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

Autor: O. L. Stroyuk, M. V. Malashchonak, S Ya Kuchmiy, Anatoly I. Kulak, Alexander V. Mazanik, Е.А. Streltsov, Peter I. Gaiduk, Sergey K. Poznyak

Publikováno v: Thin Solid Films. 589:145-152

Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m2g− 1) results in the formation of ZnO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::55d8b1a95010a520c9132e4be36f36db
https://doi.org/10.1016/j.tsf.2015.04.057

Ion‐induced degradation of phase stability and hardness of TiZrSiN nanocomposite thin films

Autor: A. Michel, I.A. Saladukhin, V. Jasulaitene, Vladimir V. Uglov, Gregory Abadias, Sergey Dub, Peter I. Gaiduk, S. S. Leshkevich, S.V. Zlotski, G.N. Tolmachova

Publikováno v: physica status solidi c. 12:44-48

The effects of ion irradiation (180 keV Xe2+, doses 1×1016 cm–2 and 5×1016 cm–2) on the structure, phase composition and hardness of thin (300 nm) nanocomposite (Ti,Zr)1-xSixNy films deposited by magnetron sputtering (silicon concentration x≤

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a20955d699079dcfc8b4719a0c287411
https://doi.org/10.1002/pssc.201400142