Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Peter Hyun Kee Chang"'
Autor:
Beibei Han, Yuandong Gu, Peter Hyun Kee Chang, Navab Singh, Guoqiang Wu, Leong Ching Wai, Daw Don Cheam
Publikováno v:
IEEE Transactions on Industrial Electronics. 66:3835-3842
This paper presents the development of an 8-in six-degree-of-freedom (DOF) inertial sensor based on an advanced capacitive inertial sensor fabrication platform. The platform integrates three-axis gyroscopes and three-axis accelerometers on the same c
Autor:
Yao Zhu, Peter Hyun Kee Chang, Eldwin J. Ng, Nishida Yoshio, Zhipeng Ding, Navab Singh, Guoqiang Wu, Nan Wang, Yuandong Gu
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
A thin-film piezoelectric-on-silicon (TPoS) structured Lame mode resonator is experimentally reported in this work. The resonator is of a ring shape design and fabricated on the in-house AlN-on-SOI (silicon-on-insulator) platform. The thickness of th
Autor:
Leong Ching Wai, Peter Hyun Kee Chang, Beibei Han, Yuandong Gu, Navab Singh, Daw Don Cheam, Guoqiang Wu
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
The development of a robust system-in-package (SiP) technology for MEMS sensors is reported in this paper. The MEMS sensor and the application-specific integrated circuit (ASIC) chip are stacked together on a quad-flat no-leads (QFN) substrate. Wire-
Publikováno v:
NEMS
In this paper, we present the development of 6-Degree-Of-Freedom (6-DOF) inertial sensors based on an advanced capacitive inertial sensor fabrication platform on 8-inch wafer. The reported platform integrates 3-axis gyroscopes and 3-axis acceleromete
Autor:
Peter Hyun Kee Chang, Nan Wang, Li Yan Siow, Yuandong Gu, Qingxin Zhang, Lionel You Liang Wong, Chengliang Sun, Hongmiao Ji, Darmayuda I Made
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
This paper reports on the successful implementation of a wafer-level vacuum-packaged, CMOS-compatible aluminum nitride (AlN) based microelectromechanical system (MEMS) energy harvester (EH). The reported EH features high Q-factor (709.3) and high-g s
Autor:
Li Yan Siow, Peter Hyun Kee Chang, Yuandong Gu, Chengliang Sun, Qingxin Zhang, Hongmiao Ji, Nan Wang
Publikováno v:
2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS).
This paper experimentally demonstrates an aluminum nitride (AlN) based piezoelectric MEMS energy harvester (EH) with an operation bandwidth of 64.6Hz (859.9Hz–924.5Hz, 7.24%), peak output open-circuit voltage of 4.43V, and an output power of 82.24