Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Peter Huebler"'
Autor:
D. Greenlaw, Jon D. Cheek, Manfred Horstmann, Christoph Schwan, Markus Lenski, Peter Huebler, Scott Luning, R. van Bentum, N. Kepler, Matthias Schaller, James F. Buller, Hartmut Ruelke, Kai Frohberg, Gert Burbach, Rolf Stephan, J. Klais, S. Krishnan, Jörg Hohage, Andy Wei, Th. Feudel, Michael Raab, G. Grasshoff, Karsten Wieczorek, Martin Gerhardt
Publikováno v:
Materials Science and Engineering: B. :3-8
Partial depleted (PD) SOI technologies have reached maturity for production of high speed, low power microprocessors. The paper will highlight several challenges found during the course of development for bringing 40 nm gate length (L GATE ) PD SOI t
Autor:
Mario M. Pelella, JR Zhou, David Eppes, Mike Leary, Stephen Hale, Date Noorlag, Larry Bullard, Peter Huebler, Stefan Schuler, Andreas Dreizner, Jim Working, Darin Chan, Christoph Schwan, Manfred Horstmann, Bill En, Karsten Wieczorek, David Greenlaw, Thomas Heidel, Volker Heinig, John Miethke, Nick Kepler, Stephan Kruegel, Kai Frohberg, Jason Rivers, Thomas Heller, Ralf Richter, Norma Rodriguez, Rich Klein
Publikováno v:
2007 IEEE International SOI Conference.
A new device structure to mitigate plasma charging damage in advanced SOI technologies has been demonstrated that can be easily incorporated into modern-day, as well as future-scaled microprocessor designs. This novel structure offers improved produc
Autor:
Moritz-Andreas Meyer, A. Preusse, Holm Geisler, Inka Zienert, Eckhard Langer, Peter Huebler, Ehrenfried Zschech
Publikováno v:
Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..
In this paper, EM-induced degradation processes and failure in on-chip interconnects are discussed based on experimental studies. In-situ microscopy studies at embedded via/line dual inlaid copper interconnect test structures show that void formation
Autor:
D. Greenlaw, Rolf Stephan, James F. Buller, Jon D. Cheek, Michael Raab, Christoph Schwan, Markus Lenski, N. Kepler, Karsten Wieczorek, Martin Gerhardt, Gert Burbach, Thomas Feudel, Jörg Hohage, Kai Frohberg, Andy Wei, J. Klais, S. Krishnan, Scott Luning, Peter Huebler, Matthias Schaller, Manfred Horstmann, G. Grasshoff, R. van Bentum, Hartmut Ruelke
Publikováno v:
2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866).
Partial depleted (PD) SOI technologies have reached maturity for production of high speed, low power microprocessors. The paper will highlight several challenges found during the course of development for bringing 40nm gate length (L/sub GATE/) PD SO
Autor:
R. Kirsch, Gunter Grasshoff, Peter Huebler, Falk Graetsch, Thomas Feudel, Thomas Werner, Stephan Kruegel, Holger Schuehrer, Thomas Heller, Hartmut Ruelke, Karsten Wieczorek, Rolf Stephan, Michael Raab, Kai Frohberg, E. Langer, A. Pawlowitsch, Carsten Hartig, D. Greenlaw, Andy Wei, Gert Burbach, K. Hempel, Manfred Horstmann, Frank Feustel
Publikováno v:
IEEE International Electron Devices Meeting 2003.
SOI and low-k technologies are rapidly approaching production maturity. This paper highlights several challenges found when moving them from development to high-volume manufacturing. In overcoming these challenges in wafer processing and transistor d