Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Peter Hudek"'
Autor:
Piotr Grabiec, Krystyna Studzińska, Michał Zaborowski, Stanisław Mitura, Steffen Biehl, Peter Hudek, Ivan Kostic, Andrzej Jakubowski, Ivo W. Rangelow
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2001)
A new method for the fabrication of field emis- sion arrays (FEA) based on bulk/surface silicon micromachin- ing and diamond-like-carbon (DLC) coating was developed. A matrix of self-aligned electron field emitters is formed in sil- icon by mean anis
Externí odkaz:
https://doaj.org/article/4a9673666ab14d359f31aff289d3d338
Autor:
Michael Haberler, Peter Hudek, Michal Jurkovic, Elmar Platzgummer, Christoph Spengler, Lena Bachar, Steffen Steinert, Hui-Wen Lu-Walther, Dirk Beyer
Publikováno v:
37th European Mask and Lithography Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ec3bd36941f75846f0ee82a4ef5ce72
https://doi.org/10.1117/12.2641517
https://doi.org/10.1117/12.2641517
Autor:
Rao Nageswara, Peter Buck, Jed H. Rankin, Christoph Spengler, Peter Hudek, Murali Reddy, Stefan Eder-Kapl, Michal Jurkovic, Christian Bürgel, Bhardwaj Durvasula, Elmar Platzgummer, Jan Klikovits, Ingo Bork
Publikováno v:
Photomask Technology 2018.
Mask Process Correction (MPC) is well established as a necessary step in mask data preparation (MDP) for electron beam mask manufacturing at advanced technology nodes from 14nm and beyond. MPC typically uses an electron scatter model to represent e-b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd56e75b5562536cf96a91fe4b085ef0
https://doi.org/10.1117/12.2503284
https://doi.org/10.1117/12.2503284
Autor:
Joong Hee Park, Yohan Choi, Ik Boum Hur, Jan Klikovits, Jeff McMurran, Henry Kamberian, Peter Hudek, Michal Jurkovic, Daniel Chalom, Young Ham, Michael Green, Brian Dillon, Bryan S. Kasprowicz
Publikováno v:
32nd European Mask and Lithography Conference.
As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) result in st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f93cec2affca8fd6a22236215754455
https://doi.org/10.1117/12.2247941
https://doi.org/10.1117/12.2247941
Autor:
Michal Jurkovic, Brian Dillon, Peter Hudek, Henry Kamberian, Young Ham, Yohan Choi, Jeff McMurran, Bryan S. Kasprowicz, Michael Green, Ik Boum Hur, Jan Klikovits, Joong Hee Park, Daniel Chalom
Publikováno v:
SPIE Proceedings.
As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced optical proximity correction (OPC) and Inverse Lithography Technology (ILT) result in st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67bf6177930309bbe74c63fcb5575b0f
https://doi.org/10.1117/12.2243407
https://doi.org/10.1117/12.2243407
Autor:
Klaus-Dieter Roeth, Frank Laske, David Geist, Mehdi Daneshpanah, Stefan Eder-Kapl, Daniel Chalom, Stefan Eyring, Peter Hudek, Jan Klikovits
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
Reticles for manufacturing upcoming 10nm and 7nm Logic devices will become very complex, no matter whether 193nm water immersion lithography will continue as main stream production path or EUV lithography will be able to take over volume production o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44e65fc881cbc0688a02e9608188087e
https://doi.org/10.1117/12.2196388
https://doi.org/10.1117/12.2196388
Autor:
William J. Dauksher, Dirk Beyer, Olaf Fortagne, Tim Groves, Kevin J. Nordquist, David P. Mancini, Peter Hudek, Douglas J. Resnick
Publikováno v:
Microelectronic Engineering. 75:345-351
If imprint lithography is to be considered as a viable method for fabricating high density silicon-based circuits, an infrastructure must be established that is capable of supplying users with 1X templates. It is critical, therefore, that tools are a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73732a029c316d51594b626311b4b61c
https://doi.org/10.1016/j.mee.2004.06.007
https://doi.org/10.1016/j.mee.2004.06.007
Autor:
Hsin-Yi Lee, L. Matay, P. Hrkut, Peter Hudek, Ulf Kleineberg, Eva Majkova, Ulrich Heinzmann, Kostic, L. Dreeskornfeld, Stefan Luby, G. Haindl, Burkhard E. Volland, F. Shi, Ivo W. Rangelow
Publikováno v:
Thin Solid Films. 458:227-232
Recently, Mo/Si multilayer reflectors have been gaining industry interest as a promising choice for the next generation extreme ultraviolet mask material for printing sub 70 nm feature size devices. A reactive ion etching system with optimized hardwa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90dfd1c21dffc304dad1d0217b7d7b36
https://doi.org/10.1016/j.tsf.2003.09.070
https://doi.org/10.1016/j.tsf.2003.09.070
Autor:
A. E. Lushkin, Tomasz Debski, Ivo W. Rangelow, I. I. Bekh, Piotr Grabiec, Peter Hudek, L. G. Il’chenko, Steffen Biehl, Ivan Kostic, Stanislaw Mitura, V. V. Il’chenko, Wolfgang Barth
Publikováno v:
Scopus-Elsevier
The successful fabrication of field emission (FE) devices is directly related to process simplicity and device performance, which depends to a large extent on the tip material and emitter geometry. On the other hand, these characteristics are the mos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa18a4dac5a50039f0f7cc4961b326cd
https://doi.org/10.1016/s0167-9317(01)00557-3
https://doi.org/10.1016/s0167-9317(01)00557-3
Autor:
Peter Hudek, O. Wehmeyer, G. Haindl, Ivan Kostic, S. Rahn, Ulrich Heinzmann, Ulf Kleineberg, R. Segler, Eva Majkova, L. Dreeskornfeld
Publikováno v:
Microelectronic Engineering. 54:303-314
Reactive Ion Etching (RIE) of Mo/Si multilayers (MLs) with double layer thicknesses of about 10 nm and total layer thicknesses between 80 nm and 300 nm prepared by electron beam deposition onto Si or oxidized Si substrates was investigated in a fluor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9313b18346c0c61f0fbb6656315e837d
https://doi.org/10.1016/s0167-9317(99)00449-9
https://doi.org/10.1016/s0167-9317(99)00449-9