Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Peter H. Griffin"'
Autor:
Fabien C.-P. Massabuau, Peter H. Griffin, Helen P. Springbett, Yingjun Liu, R. Vasant Kumar, Tongtong Zhu, Rachel A. Oliver
Publikováno v:
APL Materials, Vol 8, Iss 3, Pp 031115-031115-5 (2020)
Porosification of nitride semiconductors provides a new paradigm for advanced engineering of the properties of optoelectronic materials. Electrochemical etching creates porosity in doped layers while leaving undoped layers undamaged, allowing the rea
Externí odkaz:
https://doaj.org/article/dd6d3f824a7346ed9a95efae41250cf9
Autor:
Bogdan F. Spiridon, Peter H. Griffin, John C. Jarman, Yingjun Liu, Tongtong Zhu, Andrea De Luca, Rachel A. Oliver, Florin Udrea
Publikováno v:
Proceedings, Vol 2, Iss 13, p 776 (2018)
This study focuses on the thermal characterization of porous gallium nitride (GaN) usingan extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chipthermal insulation, a fundamental requirement for low-power, high
Externí odkaz:
https://doaj.org/article/adef782fba694b49bf15c1f36a043b3c
Autor:
Peter H. Griffin, Eric G. Warren
Publikováno v:
IEEE Spectrum. 1:172-175
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e04dd3a8d1a587e8dd118987bee1d68
https://doi.org/10.1109/mspec.1964.6500625
https://doi.org/10.1109/mspec.1964.6500625
Publikováno v:
Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p