Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Peter H. Chi"'
Autor:
James D. Batteas, Eric S. Windsor, Kyung Joong Kim, Peter H. Chi, Jennifer R. Verkouteren, Albert J. Fahey, Greg Gillen, John A. Small, Chris A. Michaels
Publikováno v:
Applied Surface Science. 252:6521-6525
A C60+ primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C60+ depth profiling for high depth resolution SIMS analysi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c74a2c35d5ec8a4d3d16c6a085e4600d
https://doi.org/10.1016/j.apsusc.2006.02.234
https://doi.org/10.1016/j.apsusc.2006.02.234
Publikováno v:
Surface and Interface Analysis. 37:802-808
B-doped Si multiple delta-layers (MDL) were developed as certified reference materials (CRM) for secondary ion mass spectrometry (SIMS) depth profiling analysis. Two CRMs with different delta-layer spacing were grown by ion beam sputter deposition (I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d380994301a341f7db80b654893fc58
https://doi.org/10.1002/sia.2080
https://doi.org/10.1002/sia.2080
Autor:
Mike Boldman, Abigail P. Lindstrom, Jennifer R. Verkouteren, Robert A. Fletcher, Cindy Zeissler, David S. Bright, Christine M. Mahoney, Richard T. Lareau, Peter H. Chi, Greg Gillen
Publikováno v:
Applied Surface Science. :186-190
Cluster primary ion bombardment combined with secondary ion imaging is used on an ion microscope secondary ion mass spectrometer for the spatially resolved analysis of organic particles on various surfaces. Compared to the use of monoatomic primary i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d78d06ae71eef1556bcde18826cae12c
https://doi.org/10.1016/j.apsusc.2004.03.114
https://doi.org/10.1016/j.apsusc.2004.03.114
Autor:
Greg Gillen, Peter H. Chi
Publikováno v:
Applied Surface Science. :127-130
Positive secondary ion yields are strongly enhanced by the presence of reactive gas species. Oxygen primary ion beam or oxygen backfilling is commonly used for this purpose. However, for some metal elements that form a weak oxide bond such as Nb, Mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66f5b66e74805ed209b3b40f96ffafe1
https://doi.org/10.1016/j.apsusc.2004.03.089
https://doi.org/10.1016/j.apsusc.2004.03.089
Autor:
Peter H. Chi, Paul R. Berger, Phillip E. Thompson, A.T. Rice, S. Sudirgo, Sung-Yong Chung, C. Rivas, Santosh K. Kurinec, Niu Jin, Roger K. Lake, Karl D. Hirschman, B. Curanovic, J.J. Kempisty, David S. Simons, Sean L. Rommel
Publikováno v:
IEEE Transactions on Electron Devices. 50:1876-1884
Si/SiGe resonant interband tunnel diodes (RITDs) employing /spl delta/-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d885f48de541baae6ad855fdbe4a00f3
https://doi.org/10.1109/ted.2003.815375
https://doi.org/10.1109/ted.2003.815375
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:688-692
The metrology section of the 1999 International Technology Roadmap for Semiconductors specifies in-line dopant profile concentration precision requirements ranging from a value of 5% in 1999 to a value of 2% in 2008. These values are to be accomplish
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e54ce9ed04f33b0f2655644cb166c63
https://doi.org/10.1116/1.1463084
https://doi.org/10.1116/1.1463084
Autor:
Glenn G. Jernigan, B. T. Jonker, Phillip E. Thompson, Peter H. Chi, O. M. J. van ‘t Erve, David S. Simons
Publikováno v:
Thin Solid Films. 518:S270-S272
Phosphorus doping of silicon during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 °C to 870 °C. By designing a growth sequence that fully accounts for the P deposited in a delta-doped layer, and then tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bac75a66a96d4d2b66f26131fd4f0b9d
https://doi.org/10.1016/j.tsf.2009.10.105
https://doi.org/10.1016/j.tsf.2009.10.105
Autor:
David S. Simons, Niu Jin, Peter H. Chi, Sean L. Rommel, Roger K. Lake, Paul R. Berger, Mark E. Twigg, Karl D. Hobart, Phillip E. Thompson, Alan Seabaugh
Publikováno v:
Thin Solid Films. 380:145-150
Tunneling devices in combination with transistors offer a way to extend the performance of existing technologies by increasing circuit speed and decreasing static power dissipation. We have investigated Si-based tunnel diodes grown using molecular be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4250ab6bf5a1ec0e3e43ea549674ec
https://doi.org/10.1016/s0040-6090(00)01490-5
https://doi.org/10.1016/s0040-6090(00)01490-5
Autor:
G.C.B. Braga, Jesse B. Tucker, Mulpuri V. Rao, O. W. Holland, Peter H. Chi, Jaime A. Freitas, Nicolas A. Papanicolaou
Publikováno v:
Diamond and Related Materials. 9:1887-1896
Single and multiple energy As and Sb implantations were performed into p-type 6H–SiC epitaxial layers at room temperature (RT) and 800°C. Secondary ion mass spectrometry measurements showed severe implant loss for annealing temperatures >1500°C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a5315206432f80ed623154212320b9d
https://doi.org/10.1016/s0925-9635(00)00340-x
https://doi.org/10.1016/s0925-9635(00)00340-x
Autor:
Mulpuri V. Rao, Thirumalai Venkatesan, Michael A. Derenge, R. D. Vispute, Evan M. Handy, O. W. Holland, Kenneth A. Jones, Peter H. Chi
Publikováno v:
Journal of Electronic Materials. 29:1340-1345
Aseries of single energy Al, B, and Ga ion implants were performed in the energy range 50 keV to 4 MeV into 6H-SiC to characterize the implant depth profiles using secondary ion mass spectrometry (SIMS). From the implant depth profiles empirical form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b1e86a1c75efe1c95a487ba7d9ce3b
https://doi.org/10.1007/s11664-000-0135-z
https://doi.org/10.1007/s11664-000-0135-z