Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Peter G. Hugger"'
Autor:
Yang Li, Subhendu Guha, Jinyan Zhang, Tining Su, Peter G. Hugger, Jeff Yang, Xixiang Xu, Scott Ehlert, David Beglau, Ken Lord, Arindam Banerjee, J. David Cohen, Guozhen Yue, Baojie Yan, G. Pietka
Publikováno v:
physica status solidi c. 7:1077-1080
We have developed high efficiency large area a-Si:H and a-SiGe:H multi-junction solar cells using a Modified Very High Frequency (MVHF) glow discharge process. We investigated a-SiGe:H deposition rate dependence of cell performance, and optimized MVH
Publikováno v:
Philosophical Magazine. 89:2541-2555
Hydrogenated nanocrystalline silicon (nc-Si:H) is a complex mixed-phase material containing regions of silicon nanocrystallites interspersed with amorphous silicon. It is an important material in efforts to advance the production of more economical m
Publikováno v:
Journal of Non-Crystalline Solids. 354:2460-2463
The electronic properties of hydrogenated nanocrystalline silicon (nc-Si:H) were studied using drive-level capacitance profiling (DLCP) to obtain defect density profiles as well as transient photocapacitance (TPC) and transient photocurrent (TPI) spe
Autor:
D. Westley Miller, Jet Meitzner, Peter G. Hugger, Angus Rockett, Charles W. Warren, J. David Cohen, Stephen D. Kevan
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
A new, contactless, microwave photoconductance based technique for the direct measurement of the spectral dependence of free carrier generation efficiency in semiconductors is described and demonstrated. The technique is applied to the search for het
Autor:
Peter G. Hugger, Jeff Yang, JinWoo Lee, J. David Cohen, Subhendu Guha, Xixiang Xu, Guozhen Yue, Baojie Yan
Publikováno v:
MRS Proceedings. 1245
We have examined a series of a Si,Ge:H alloy devices deposited using both RF and VHF glow discharge in two configurations: SS/n+/i (a-SiGe:H)/p+/ITO nip devices and SS/n+/i (a-SiGe:H)/Pd Schottky contact devices, over a range of deposition rates. We
Autor:
JinWoo Lee, Guozhen Yue, Peter G. Hugger, Baojie Yan, Xixiang Xu, David J. Cohen, Jeff Yang, Subhendu Guha
Publikováno v:
MRS Proceedings. 1153
Significant advances have been made in increasing the deposition rate of hydrogenated silicon germanium alloys (a-SiGe:H) using a modified VHF glow discharge deposition method while also maintaining good electronic properties important for its applic
Autor:
D. Beglau, Guozhen Yue, Baojie Yan, David J. Cohen, Xixiang Xu, Jeff Yang, Subhendu Guha, Arindam Banerjee, Ken Lord, Tining Su, Scott Ehlert, Peter G. Hugger, Yang Li
Publikováno v:
MRS Proceedings. 1153
We have developed high efficiency large area a-Si:H and a-SiGe:H multi-junction solar cells using a Modified Very High Frequency (MVHF) glow discharge process. We conducted a comparative study for different cell structures, and compared the initial a
Autor:
Yang Li, D. Beglau, Peter G. Hugger, Guozhen Yue, Subhendu Guha, Xixiang Xu, Baojie Yan, J. David Cohen, Greg DeMaggio, Arindam Banerjee, Jeff Yang
Publikováno v:
MRS Proceedings. 1066
Solar cells based on hydrogenated nanocrystalline silicon (nc-Si:H) have demonstrated significant improvement in the last few years. From the standpoint of commercial viability, good quality nc-Si:H films must be deposited at a high rate. In this pap
Autor:
Peter G. Hugger, Xixiang Xu, J. David Cohen, Guozhen Yue, Subhendu Guha, Baojie Yan, Jeffrey Yang
Publikováno v:
MRS Proceedings. 1066
Junction capacitance measurements were used to characterize the properties of nanocrystalline silicon (nc-Si:H) solar cells. These methods included drive-level capacitance profiling (DLCP) to obtain spatially-resolved defect densities, as well as tra
Autor:
Gautam Ganguly, Shouvik Datta, J. D. Cohen, Jeffrey Yang, Subhendu Guha, Guozhen Yue, Baojie Yan, Peter G. Hugger, Peter T. Erslev
Publikováno v:
MRS Proceedings. 910
The electronic properties of working nanocrystalline silicon (nc-Si:H) solar cell devices with conversion efficiencies up to 8.6% were studied using junction capacitance methods. The set of devices examined were deposited on both specular stainless s