Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Peter G. Eliseev"'
Publikováno v:
Applied Physics A. 92:903-906
The mechanisms of nonlinear absorption in transparent materials under irradiation with ultrashort laser pulses are considered theoretically. Nitride semiconductor, sapphire and others transparent dielectrics were investigated. The ablation threshold
Publikováno v:
Novel In-Plane Semiconductor Lasers XIV.
The analysis of I-V and I-L curves in mid-IR quantum cascade lasers operating at room temperature is performed. When the ohmic component of the device resistance in the I-V curve is subtracted, the current I can be approximated by the exponential fun
Publikováno v:
Semiconductor Science and Technology. 19:33-38
Photoluminescence from InAs quantum dots in a strained Ga0.85In0.15As quantum well is investigated over a temperature range from 10 to 300 K using low intensity optical excitation. A rate equation model for the carrier dynamics is fitted to the exper
Publikováno v:
Journal of Applied Physics. 94:2454-2458
A spectrally and spatially resolved investigation of emission from InAs/GaInAs quantum dots is performed using confocal photoluminescence. Structures investigated included a single layer of InAs dots embedded in a Ga0.85In0.15As quantum well and InAs
Publikováno v:
Journal of Electronic Materials. 26:311-319
We investigate electrical and optical characteristics of Nichia NLPB-500 double-heterostructure blue light-emitting diodes (LEDs), measured over a wide temperature range from 10 to 300K. Current-voltage characteristics have complex character and sugg
Publikováno v:
Applied Surface Science. 248:313-315
The processes of nonlinear absorption are considered in transparent materials like nitride semiconductor, sapphire and other dielectrics under ultrashort (femtosecond (fs)-range) laser pulses irradiation. The ablation threshold is in the multi-TW/cm
Publikováno v:
SPIE Proceedings.
Conditions for obtaining slow/fast and backscattered light via nonlinear wave interactions in semiconductor lasers are investigated using numerical modeling of interacting waves. Feasibility of superluminal propagation induced by a strong driving wav
Nonlinear Mechanisms of Light Beam Absorption in Transparent Materials under High Power Laser Action
Autor:
Peter G. Eliseev, Natalia A. Kozlovskaya, Oleg N. Krokhin, Irina N. Zavestovskaya, Claude Phipps
Publikováno v:
AIP Conference Proceedings.
Analysis of nonlinear mechanisms of light beam absorption in transparent materials under high power and ultrashort pulses laser action is presented. The processes of nonlinear absorption and ablation of transparent materials (such as nitride semicond
Publikováno v:
SPIE Proceedings.
The nonlinear absorption mechanisms in transparent materials under ultrashort laser pulses irradiation are considered theoretically. Nitride semiconductor, sapphire and others transparent dielectrics was investigated. The ablation threshold for these
Publikováno v:
SPIE Proceedings.
The nonlinear mode interactions (NMIs) in semiconductor lasers produce perturbations of optical parameters in the vicinity of strong-mode frequencies. These perturbations include changes in the complex refractive index, which could either increase or