Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Peter Frisella"'
Autor:
F.P. Klemens, Peter Frisella, William M. Mansfield, Anthony T. Fiory, Nuggehalli M. Ravindra, T.W. Sorsch, Aditya Agarwal, Markus Rabus, E. Ferry, J.F. Miner, R. Cirelli
Publikováno v:
Journal of Electronic Materials. 35:877-891
Fabrication of devices and circuits on silicon wafers creates patterns in optical properties, particularly the thermal emissivity and absorptivity, that lead to temperature nonuniformity during rapid thermal processing (RTP) by infrared heating metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eac06d47e970d08e8959a2c506b61feb
https://doi.org/10.1007/bf02692543
https://doi.org/10.1007/bf02692543
Autor:
Hans-Joachim Ludwig Gossmann, Anthony T. Fiory, Peter Frisella, Conor S. Rafferty, Aditya Agarwal
Publikováno v:
Materials Science in Semiconductor Processing. 1:237-241
Ultra-shallow p-type junction formation has been investigated using 1050°C spike anneals in lamp-based and hot-walled rapid thermal processing (RTP) systems. A spike anneal may be characterized by a fast ramp-up to temperature with only a fraction o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7bc0d4283ffd168605980d709248272
https://doi.org/10.1016/s1369-8001(98)00030-4
https://doi.org/10.1016/s1369-8001(98)00030-4
Autor:
Ronald N. Reece, Kwang-Chul Joo, Dong-Ho Lee, KyungWon Lee, Sang Wook Park, Sungki Kim, Chul‐Young Ham, Noh-Yeal Kwak, Peter Frisella, Sungki Park, B. Jacobs, G. Cai
Publikováno v:
2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors.
This paper presents a method to minimize cross-wafer threshold voltage variation, specifically radial variation, on device wafers using the inherent characteristics and repeatability of a bell-jar hot wall RTP system. The temperature uniformity of Ax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bd42b1f34d9e938156e3775cd66cf0c
https://doi.org/10.1109/rtp.2006.368010
https://doi.org/10.1109/rtp.2006.368010
Autor:
Peter Frisella, Qingyuan Han, Kevin Durr, Palanikumaran Sakthivel, Ivan Berry, Darren Moore, Carlo Waldfried
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
UV-assisted processing has become an enabling technology in next-generation device development allowing chip manufacturers to build advanced transistor structures that deliver state-of-the-art device performance. The list of UV-based applications for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55e6d9768290c301c2d8611648aaf1a0
https://doi.org/10.1109/icsict.2006.306339
https://doi.org/10.1109/icsict.2006.306339
Autor:
J. Hebb, Peter Frisella, H.-J. Gossmann, Anthony T. Fiory, J. Jackson, Aditya Agarwal, Conor S. Rafferty
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
Ultra-shallow p-type junction formation has been investigated using 1050/spl deg/C spike anneals in lamp-based and hot-walled rapid thermal processing (RTP) systems. A spike anneal may be characterized by a fast ramp-up to temperature with only a fra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85cb7e95bbfb9d878738ccd5503ccabc
https://doi.org/10.1109/iit.1999.812042
https://doi.org/10.1109/iit.1999.812042
Publikováno v:
MRS Proceedings. 669
We have investigated diode leakage in junctions produced by ion-implantation of B with energies of 0.5 - 2 keV and doses of 2 × 1014 — 2 × 1015 cm−2 into n-type wells of ∼1 × 1018 cm−3, after rapid-thermal anneals (RTA) in lamp-based and h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::573dde4c06c6ad27b541743d457b7db4
https://doi.org/10.1557/proc-669-j8.4
https://doi.org/10.1557/proc-669-j8.4
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