Determination of thermoelectric properties from micro four-point probe measurements

Autor: Benny Guralnik, Ole Hansen, Andreas R Stilling-Andersen, Søren E Hansen, Kasper A Borup, Besira M Mihiretie, Braulio Beltrán-Pitarch, Henrik H Henrichsen, Rong Lin, Lior Shiv, Bo B Iversen, Peter F Nielsen, Dirch H Petersen

Publikováno v: Guralnik, B, Hansen, O, Stilling-Andersen, A R, Hansen, S E, Borup, K, Mihiretie, B M, Beltrán-Pitarch, B, Henrichsen, H H, Lin, R, Shiv, L, Iversen, B B, Nielsen, P F & Petersen, D H 2022, ' Determination of thermoelectric properties from micro four-point probe measurements ', Measurement Science and Technology, vol. 33, no. 12, 125001 . https://doi.org/10.1088/1361-6501/ac88ea
Guralnik, B, Hansen, O, Stilling-Andersen, A R, Hansen, S E, Borup, K A, Mihiretie, B M, Beltrán-Pitarch, B, Henrichsen, H H, Lin, R, Shiv, L, Iversen, B B, Nielsen, P F & Petersen, D H 2022, ' Determination of thermoelectric properties from micro four-point probe measurements ', Measurement Science and Technology, vol. 33, no. 12, 125001 . https://doi.org/10.1088/1361-6501/ac88ea

Micro four-point probing is a branch of electrical metrology where electrical (and electromagnetic) properties of charge carriers such as conductance, mobility, and tunneling magnetoresistance can be accurately and precisely determined at the μm sca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f70765cbdff6f0f4061eb149dc5e907
https://pure.au.dk/portal/da/publications/determination-of-thermoelectric-properties-from-micro-fourpoint-probe-measurements(3824d440-3043-4dd8-aa46-0d2f731fa485).html

Review of Micro- and Nanoprobe Metrology for Direct Electrical Measurements on Product Wafers

Autor: Benny Guralnik, Peter F. Nielsen, Dirch H. Petersen, Ole Hansen, Lior Shiv, Wilson Wei, Thomas A. Marangoni, Jonas D. Buron, Frederik W. Osterberg, Rong Lin, Henrik H. Henrichsen, Mikkel F. Hansen

Publikováno v: 2022 China Semiconductor Technology International Conference (CSTIC).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da22a049cd31310b1f6b61721bc084bc
https://doi.org/10.1109/cstic55103.2022.9856824

Apparent size effects on dopant activation in nanometer-wide Si fins

Autor: Ole Hansen, Henrik Hartmann Henrichsen, Dirch Hjorth Petersen, Paola Favia, Steven Folkersma, Lennaert Wouters, Lior Shiv, Peter F. Nielsen, Wilfried Vandervorst, Janusz Bogdanowicz

Publikováno v: Folkersma, S, Bogdanowicz, J, Favia, P, Wouters, L, Petersen, D H, Hansen, O, Henrichsen, H H, Nielsen, P F, Shiv, L & Vandervorst, W 2021, ' Apparent size effects on dopant activation in nanometer-wide Si fins ', Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, vol. 39, no. 2, 023202 . https://doi.org/10.1116/6.0000921

Due to the dramatic downscaling of device features in recent technology nodes, characterizing the electrical properties of these structures is becoming ever more challenging as it often requires metrology able to probe local variations in dopant and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6259bca7c05a7e47effcaa30af30567e
https://orbit.dtu.dk/en/publications/eb7299f1-9604-4ff1-876c-198583a70958

In-Line Resistance Measurement of Single Nanometer-Wide Trenches and Fins

Autor: Janusz Bogdanowicz, Brigitte Parmentier, Andreas Schulze, Alain Moussa, Clement Merckling, Bernardette Kunert, Weiming Guo, Yves Mols, Clement Porret, Erik Rosseel, Andriy Yakovitch Hikavyy, Ole Hansen, Dirch H. Petersen, Henrik H. Henrichsen, Peter F. Nielsen, Wilfried Vandervorst

Publikováno v: ECS Meeting Abstracts. :2008-2008

Since the advent of non-planar metal-oxide-semiconductor (MOS) transistors, embodied by the three-dimensional fin field-effect transistors (finFETs), there has been a rising need for fast in-line metrology solutions for the electrical characterizatio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca05298d06c51eb0075e987a9820bb00
https://doi.org/10.1149/ma2016-02/30/2008

Electrical characterization of InGaAs ultra-shallow junctions

Autor: Clement Merckling, Julien Penaud, Jozefien Goossens, Peter F. Nielsen, Dirch Hjorth Petersen, Peter Bøggild, Trudo Clarysse, Rong Lin, Guy Brammertz, Alireza Alian, Dennis Lin, Ole Hansen, Wilfried Vandervorst, Christoph Adelmann

Publikováno v: Technical University of Denmark Orbit

In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4P

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1eaf173153c86bcaadfde1a4ee99f0e7
https://orbit.dtu.dk/en/publications/9b8c92f3-2b99-4e4f-ba0d-a33857135dc0