Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Peter Evanschitzky"'
Autor:
Jürgen Lorenz, Eberhard Bär, Sylvain Barraud, Andrew R. Brown, Peter Evanschitzky, Fabian Klüpfel, Liping Wang
Publikováno v:
Micromachines, Vol 10, Iss 1, p 6 (2018)
Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, employ truly three-dimensional architectures. Already for aggressively scaled bulk transistors, both statistical and systematic process variations have
Externí odkaz:
https://doaj.org/article/aed914f45d3b41eb9ee566f009aef33a
Autor:
Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann
Publikováno v:
Optical and EUV Nanolithography XXXV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cff143f7edf3b8716b963d59b7b0e4cf
https://doi.org/10.1117/12.2614174
https://doi.org/10.1117/12.2614174
Background: The successful introduction of extreme ultraviolet (EUV) lithography to high volume manufacturing has increased the interest to push this technology to its ultimate limits. This will require photoresist materials, which enable a better tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea09cf9820e1cfe2cfab5cccabf6f9a3
https://publica.fraunhofer.de/handle/publica/435500
https://publica.fraunhofer.de/handle/publica/435500
Autor:
Simon Bihr, Vicky Philipsen, Andreas Erdmann, Hazem Mesilhy, Victor Soltwisch, Peter Evanschitzky, Joerg Zimmermann, Qais Saadeh
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
State-of-the-art EUV exposure systems utilize EUV radiation around 13.52 nm with a full band spectrum extend- ing from 13.2 nm to 13.8 nm. The variation of the wavelength in this range modifies the diffraction angles with an impact on the image blur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bc85b872ca81fd37b8a54d6453ea00c
https://doi.org/10.1117/12.2600931
https://doi.org/10.1117/12.2600931
Autor:
Eelco van Setten, Gerardo Bottiglieri, Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Claire van Lare, Mark van de Kerkhof, Tim Brunner
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
We employ the hybrid mask model of the Fraunhofer IISB simulator Dr.LiTHO to investigate the role of the absorber and multilayer for the observed image blur and contrast loss mechanisms. Hybrid mask model decomposes the EUV mask into the absorber and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f806de94d92eee2adcd7c0361a4c5455
https://doi.org/10.1117/12.2601243
https://doi.org/10.1117/12.2601243
Autor:
Abdalaziz Awad, Andreas Erdmann, Andreas Rosskopf, Philipp Brendel, Peter Evanschitzky, Dereje S. Woldeamanual
Background: As extreme ultraviolet lithography (EUV) lithography has progressed toward feature dimensions smaller than the wavelength, electromagnetic field (EMF) solvers have become indispensable for EUV simulations. Although numerous approximations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ebd08ff287141beeb582187e5bd3924
https://publica.fraunhofer.de/handle/publica/416066
https://publica.fraunhofer.de/handle/publica/416066
Autor:
Claire van Lare, Gerardo Bottiglieri, Peter Evanschitzky, Andreas Erdmann, Hazem Mesilhy, Eelco van Setten
Background: Explaining imaging phenomena in EUV lithography requires more than a single point of view. Traditionally, the diffraction characteristics of EUV masks are analyzed in terms of the amplitude and phase of diffraction orders that are generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b953ee099f6a6afaf370d999df638968
https://publica.fraunhofer.de/handle/publica/270920
https://publica.fraunhofer.de/handle/publica/270920
Autor:
Andreas Erdmann, Hazem Mesilhy, Frank Timmermans, Peter Evanschitzky, Markus Bauer, Vicky Philipsen
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS
Next-generation extreme ultraviolet (EUV) systems with numerical apertures of 0.55 have the potential to provide sub-8-nm half-pitch resolution. The increased importance of stochastic effects at smaller feature sizes places further demands on scanner
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3d35457b287cda6018ca9f66d74eec6
https://doi.org/10.1117/1.jmm.19.4.041001
https://doi.org/10.1117/1.jmm.19.4.041001
Autor:
Vicky Philipsen, Andreas Erdmann, Hazem Mesilhy, Frank Timmermans, Peter Evanschitzky, Markus Bauer
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Pushing the novel anamorphic NA=0.55 EUV projection optics to k1 values below 0.4 and to its ultimate resolution limit will require an alternative mask absorber stack. This paper describes the application of rigorous imaging simulations in combinatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6103d51383dd5cf78678f36ab1d6b050
https://doi.org/10.1117/12.2550882
https://doi.org/10.1117/12.2550882
Autor:
Timon Fliervoet, Gerardo Bottiglieri, Peter Evanschitzky, Andreas Erdmann, Hazem Mesilhy, E. van Setten
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Mitigation of 3D-mask effects is a requirement for pushing high-NA (0.55) EUV lithography to its limits. Both the absorber and the reflective multilayer parts of the EUV mask contribute to the 3D-mask effects. This paper focuses on the investigation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b6177da197202f5d8976551dacb501b
https://doi.org/10.1117/12.2551870
https://doi.org/10.1117/12.2551870