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pro vyhledávání: '"Peter E. Mcwilliams"'
Autor:
Jun Hu, Peter E. Mcwilliams, John E. Darges, Daniel L. Druffel, Andrew M. Moran, Zhenkun Guo, Scott C. Warren
Publikováno v:
Nano Letters. 16:74-79
The electronic structure of 2D semiconductors depends on their thickness, providing new opportunities to engineer semiconductors for energy conversion, electronics, and catalysis. Here we show how a 3D semiconductor, black phosphorus, becomes active
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26073d0183f4bde7f29305168b763581
https://doi.org/10.1021/acs.nanolett.5b02895
https://doi.org/10.1021/acs.nanolett.5b02895
