Application of the 1-D silicon limit to varactors

Autor: R.J. Havens, W.D. van Noort, Angel Rodríguez, Peter Deixler

Publikováno v: IEEE Transactions on Electron Devices. 53:1601-1607

Solid-state varactor performance is evaluated in light of fundamental tradeoffs imposed by semiconductor material. This leads to the important conclusion that the product of Q factor, frequency, tuning range, and breakdown voltage has an upper limit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7e8d9c48df40ff6b00b6d05a613bc6eb
https://doi.org/10.1109/ted.2006.875814

Industry Examples at the State-of-the-Art

Autor: Roy A. Colclaser, Peter Deixler

Publikováno v: Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe5cd5be9e1caac576a8db47ec09a8c3
https://doi.org/10.1201/9781420026580.ch3.12

High perfarinance SiGeC HBT integrated into a 0.25μm BiCMOS technology featuring record 88% power-added efficiency

Autor: H.G.A. Huizing, D.M.H. Hartskeerl, Peter Deixler, P.H.C. Magnee, W.D. van Noort

Publikováno v: 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

This paper reports on the power performance of RF high-breakdown voltage (>16.5 V) SiGeC HBT power devices, which have been successfully integrated into a BiCMOS platform featuring 0.25 /spl mu/m CMOS and a full set of high-quality passives. These de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8044f6ebee1c9de0613f2d4289a047d
https://doi.org/10.1109/mwsym.2004.1339141