Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Peter D. Nunan"'
Publikováno v:
AIP Conference Proceedings.
The cost of new process development has risen significantly with larger wafer sizes and the increased number of fabrication steps needed to create advanced devices. The high value of each 300 mm development wafer has spurred efforts to find a way to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b86ee839210d319e58623a21cb36115
https://doi.org/10.1063/1.2401543
https://doi.org/10.1063/1.2401543
Autor:
Jinnig Liu, B.N. Guo, JieJie Xu, Terry Romig, Kyu-Ha Shim, Peter D. Nunan, Elshot Kim, Yuri Erokhin
Publikováno v:
AIP Conference Proceedings.
As CMOS devices shrink they become increasingly sensitive to variations of ion beam angular properties and beam current density. In sub‐65 nm devices beam divergence and beam steering variations at levels commonly seen in high current implanters fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0e5bc41da048554cc9982f5b7db361f
https://doi.org/10.1063/1.2401570
https://doi.org/10.1063/1.2401570
Autor:
Charles R. Spinner, Jeffrey R. Johnson, Andrew E. Bair, Audrey M. Davis, Ralph R. Dammel, Peter D. Nunan, A Mark
Publikováno v:
SPIE Proceedings.
The effects of increasing bottom-side anti-reflective coating (BARC) thickness on the CD distribution within a device are presented. In conjunction with the increasing BARC thickness, reductions in the photoresist thickness are shown to be beneficial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e6382e9bdc854edcfe88592675c39f9
https://doi.org/10.1117/12.276019
https://doi.org/10.1117/12.276019
Autor:
Satyendra S. Sethi, Lam Ta, Kent G. Green, Peter D. Nunan, Sue E. Crank, Elliott Sean Capsuto, Marcel Terbeek, Donald O. Arugu
Publikováno v:
SPIE Proceedings.
It is becoming increasingly clear that DUV excimer laser based imaging will be one of the technologies for printing sub-half micron devices. This paper reports the investigation of 0.35 micrometers photolithography process using chemically amplified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8ecae49bc70bd9ab69eabff87c6b836
https://doi.org/10.1117/12.150433
https://doi.org/10.1117/12.150433
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