Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Peter Carleson"'
Plasma FIB DualBeam Delayering for Atomic Force NanoProbing of 14 nm FinFET Devices in an SRAM Array
Autor:
Sean Zumwalt, Trevan Landin, Shih-Hsin Chang, Roger Alvis, Andrew Norman Erickson, Sinjin Dixon-Warren, Chia-Hsiang Yen, Chih-Hsun Chu, Wan-Yi Liu, Pau-Sheng Kuo, Te-Fu Chang, Peter Carleson, Oleg Sidorov, Chad Rue
Publikováno v:
International Symposium for Testing and Failure Analysis.
The result of applying normal xenon ion beam milling combined with patented DX chemistry to delayer state-of-theart commercial-grade 14nm finFETs has been demonstrated in a Helios Plasma FIB DualBeam™. AFM, Conductive-AFM and nano-probing with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4255acfd143a215568288005cbb5f435
https://doi.org/10.31399/asm.cp.istfa2015p0388
https://doi.org/10.31399/asm.cp.istfa2015p0388
Autor:
Peter Carleson, Michael DiBattista, Trevan Landin, Michael A. Gonzales, Roddy Cruz, Bryan Routh, Ebb Huggins, Jonathan Lau, Kenny Mani, Martin E. Parley
Publikováno v:
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Packaging technology plays a key role in the performance of many analog and RF circuits. Due to the size and geometries of interconnects, FIB based circuit edit has not been practical on the package. Plasma FIB (PFIB) technology allows cuts and rewir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c803c938a79eb665e79d0fa8488fad
https://doi.org/10.1109/ipfa.2012.6306324
https://doi.org/10.1109/ipfa.2012.6306324
Autor:
Peter Carleson, Nicholas Antoniou, David Monforte, Chuong Huynh, Alex Krechmer, J. D. Casey, Neil J. Bassom
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:2695
Integrated devices increasingly use flip chip packaging, which complicates modification of the circuitry using focused ion beam (FIB) systems, as the thickness of the silicon must be reduced to a few micrometers before work can begin. A technique for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0239d36686e397dbf0050a156eeef491
https://doi.org/10.1116/1.1526665
https://doi.org/10.1116/1.1526665
Autor:
Michael William Phaneuf, Jian Li, Kathryn Noll, Peter Carleson, J. David Casey, Clive D. Chandler, Thomas J. Gannon, Alex Krechmer, Nicholas Antoniou, David Monforte, Richard F. Schuman, Michael Megorden, Neil J. Bassom, Chuong Huynh
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:2682
Focused ion beam (FIB) methodologies for successfully milling copper (U.S. Patent No. 6,322,672 B1) have been demonstrated. Approaches to milling copper (Cu) are required because standard FIB mill procedures produce rough, uneven cuts that are unsuit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::417085e5def94515054870afaa02a806
https://doi.org/10.1116/1.1521736
https://doi.org/10.1116/1.1521736