Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Peter Biolsi"'
Autor:
Du Zhang, Shihsheng Chang, Pingshan Luan, Amrit Kaphle, Toru Hisamatsu, Jeffrey Shearer, Minjoon Park, Andrew Metz, Akiteru Ko, Peter Biolsi
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XII.
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Autor:
Steven Consiglio, Qingyun Yang, K. Tapily, Saraf Iqbal Rashid, Muthumanickam Sankarapandian, Paul C. Jamison, Tsunomura Takaaki, C. Catano, Robert D. Clark, T. Ando, R. Pujari, Vijay Narayanan, Hisashi Higuchi, Gerrit J. Leusink, Malte J. Rasch, R. Soave, Hongwen Yan, Ernest Y. Wu, Dexin Kong, Aelan Mosden, Peter Biolsi, Youngseok Kim, Robert R. Robison, O. van der Straten, D. Koty, S. McDermott, Soon-Cheon Seo, Hiroyuki Miyazoe, Son Nguyen, A. Gasasira, Nicole Saulnier, Wilfried Haensch, Sebastian Engelmann, C. S. Wajda, Ramachandran Muralidhar, S. DeVries
Publikováno v:
IEEE Electron Device Letters. 42:759-762
We demonstrate a novel process for building a Resistive RAM (ReRAM) stack which reduces the forming voltage ( $\text{V}_{\textit {form}}$ ) and increases the switching resistance, both characteristics that are important ingredients for the use of ReR
Autor:
Angélique Raley, Lior Huli, Steven Grzeskowiak, Katie Lutker-Lee, Alexandra Krawicz, Yannick Feurprier, Eric Liu, Kanzo Kato, Kathleen Nafus, Arnaud Dauendorffer, Nayoung Bae, Josh LaRose, Andrew Metz, Dave Hetzer, Masanobu Honda, Tetsuya Nishizuka, Akiteru Ko, Soichiro Okada, Yasuyuki Ido, Tomoya Onitsuka, Shinichiro Kawakami, Seiji Fujimoto, Satoru Shimura, Cong Que Dinh, Makoto Muramatsu, Peter Biolsi, Hiromasa Mochiki, Seiji Nagahara
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Autor:
Qiaowei Lou, Katie Lutker-Lee, Eric Liu, Gregory Denbeaux, Angelique Raley, Kai-hung Yu, Peter Biolsi, Ya-Ming Chen
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Extreme ultraviolet lithography (EUVL) has been adopted into high volume production for advanced logic device manufacturing. Due to the continuous size scaling requirement for interconnect fabrication, EUVL with self-aligned double patterning (SADP)
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning X.
Extreme ultraviolet lithography (EUVL) has been adopted into high volume production for advanced logic device manufacturing. Due to the continuous size scaling requirement for interconnect fabrication, EUVL with self-aligned double patterning (SADP)
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning X.
EUV lithography is moving forward to high volume manufacturing in DRAM production to overcome technological challenges in cell scaling. While EUV is confronting its own challenges, DRAM cell design rules have been scaled down using multiple patternin
Autor:
Mingmei Wang, Du Zhang, Hojin Kim, Kensuke Taniguchi, Peter Biolsi, Shinya Morikita, Jeffery Lucas, Yanxiang Shi
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning X.
Self-aligned contact (SAC) etch has been known to be challenging due to its limited process margin on Si3N4 to SiO2 etch selectivity. Understanding of surface modification during Quasi-ALE using fluorocarbon and Ar plasmas are essential to achieve at
Publikováno v:
2020 IEEE International Conference on Plasma Science (ICOPS).
Fabricating sub-10 nm microelectronics places plasma processing precision at atomic dimensions. Atomic layer etching (ALE) is a cyclic plasma process used in semiconductor fabrication that has the potential to remove a single layer of atoms during ea
Autor:
Xinghua Sun, Yann Mignot, Christopher Cole, Eric Liu, Daniel Santos, Angelique Raley, Jennifer Church, Luciana Meli, Stuart A. Sieg, Peter Biolsi
Publikováno v:
Journal of Vacuum Science & Technology B. 40:023207