Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Peter Bernhard Hirsch"'
Autor:
Peter Bernhard Hirsch
Publikováno v:
Philosophical Magazine. 93:3697-3702
Over a period of some 70 years, the impact of Sir Alan Cottrell’s work on the basic understanding of materials and its application to engineering structures, his academic leadership, his role of sc...
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https://explore.openaire.eu/search/publication?articleId=doi_________::5389f5f77a21e70acfd23617727944fd
https://doi.org/10.1080/14786435.2013.808772
https://doi.org/10.1080/14786435.2013.808772
Publikováno v:
ResearcherID
Profiles of the back-scattered electron intensity within electron channelling contrast images of dislocations have been calculated using a two-beam dynamical diffraction model and a simple treatment of multiple scattering. Within this diffraction mod
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d4568d3bba3e9df786c19bdf0647f84
https://ora.ox.ac.uk/objects/uuid:de325e74-2030-4b29-b48c-989657bc6f95
https://ora.ox.ac.uk/objects/uuid:de325e74-2030-4b29-b48c-989657bc6f95
Knoop hardness measurements have been carried out as a function of azimuthal angle and temperature (in the range 20°–440°C) on {001} faces of n-type, p-type, and intrinsic Ge and GaAs. The degree of hardness anisotropy shown increases with increa
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93ac564f5e7a8a55021679fa57ee50ff
https://doi.org/10.1557/jmr.1986.0162
https://doi.org/10.1557/jmr.1986.0162
Publikováno v:
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany ISBN: 9783540851547
High resolution electron microscopy (HREM) of crystals is usually carried out with the crystal aligned along a high symmetry direction. For perfect crystals the columns are straight, but crystal defects can result in strain fields that bend the atomi
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https://ora.ox.ac.uk/objects/uuid:c1f8f966-a855-4a97-9438-82a5722a7afe
https://ora.ox.ac.uk/objects/uuid:c1f8f966-a855-4a97-9438-82a5722a7afe
Three-point bend tests carried out by Folk [R.H. Folk, The brittle to ductile transition in silicon: evidence of a criticaly yield event. PhD thesis, University of Pennsylvania (2000).] on initially dislocation-free specimens of semiconductor-grade s
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https://ora.ox.ac.uk/objects/uuid:be02a15b-ab36-4cff-9e50-3881835b2efe
https://ora.ox.ac.uk/objects/uuid:be02a15b-ab36-4cff-9e50-3881835b2efe
Publikováno v:
ResearcherID
Images of defects at interfaces of strained Si1 - x Gex epilayers grown on bulk Si (001) substrates have been formed using the electron channelling contrast technique. The channelling images were obtained from bulk specimens using a highly efficient
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07d1cea9ff1ea8195c72a0085750f5b6
https://doi.org/10.1080/01418619308219357
https://doi.org/10.1080/01418619308219357
Weak-beam electron microscopy has been applied to study the dissociation of dislocations in a type II a diamond. Dislocations with Burgers vector ½[11̅0] on (111) glide planes have been found to be dissociated into two Shockley partials, with separ
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https://ora.ox.ac.uk/objects/uuid:521396ea-06b6-4168-a990-848765166c0d
https://ora.ox.ac.uk/objects/uuid:521396ea-06b6-4168-a990-848765166c0d
Experimental work on the brittle-ductile transition (BDT) has shown that the activation energy for the BDT is equal to that for dislocation glide in silicon, germanium and sapphire. Simple models, based on the shielding effect of a single evolving ar
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f973361bf30f2de9b6d5c1c0ba00729
https://ora.ox.ac.uk/objects/uuid:871b9879-f360-4a37-aaa6-35344965d883
https://ora.ox.ac.uk/objects/uuid:871b9879-f360-4a37-aaa6-35344965d883
Autor:
Akira Yasuhara, Colin J. Humphreys, M. P. Guerrero-Lebrero, Leslie J. Allen, Adrian J. D’Alfonso, Peter Bernhard Hirsch, Peter D. Nellist, Siyuan Zhang, Juan G. Lozano, Eiji Okunishi, Hao Yang, Pedro L. Galindo
We demonstrate that the aberration-corrected scanning transmission electron microscope has a sufficiently small depth of field to observe depth-dependent atomic displacements in a crystal. The depth-dependent displacements associated with the Eshelby
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https://ora.ox.ac.uk/objects/uuid:965559b7-6d02-4b00-b296-b44ec35b8f5a
https://ora.ox.ac.uk/objects/uuid:965559b7-6d02-4b00-b296-b44ec35b8f5a
Autor:
Peter D. Nellist, Vaclav Vitek, Peter Bernhard Hirsch, Roman Gröger, D. J. H. Cockayne, K. J. Dudeck
Publikováno v:
Philosophical Magazine
Philosophical Magazine, Taylor & Francis, 2011, pp.1. ⟨10.1080/14786435.2011.562474⟩
Philosophical Magazine, Taylor & Francis, 2011, pp.1. ⟨10.1080/14786435.2011.562474⟩
International audience; This paper addresses the question as to whether the core structure of screw dislocations in Mo in the bulk can be obtained from HREM images of such dislocations viewed end-on in a thin foil. Atomistic simulations of the core s
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https://doi.org/10.1080/14786435.2011.562474
https://doi.org/10.1080/14786435.2011.562474