Fabrication and characterization of thin film Ni–Cr resistors on MMICs

Autor: Peter B. K. Kyabaggu, L. Krishnamurthy, Ali A. Rezazadeh, Mohammad A. Alim

Publikováno v: Semiconductor Science and Technology. 35:035018

This paper investigates the design, fabrication, testing of Ni-Cr based thin film resistors (TFRs) with 80:20 ratio is fabricated on a 2-inch GaAs wafer for monolithic microwave integrated circuits (MMICs) applications. For the purpose of assessing t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::60a6b3703c3a131ae376e1dd9bd12970
https://doi.org/10.1088/1361-6641/ab714b

Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter

Autor: Norshakila Haris, Peter B. K. Kyabaggu, Ali A. Rezazadeh

Publikováno v: Haris, N, Kyabaggu, P B K & Rezazadeh, A 2016, ' Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter ', Semiconductor Science and Technology, vol. 31, no. 7, 075007 . https://doi.org/10.1088/0268-1242/31/7/075007

A microwave receiver protection limiter circuit has been designed, fabricated and tested using vertically stacked GaAs MMIC technology. The limiter circuit with a dimension of 2.5 × 1.3 mm2 is formed by using double-channel AlGaAs/InGaAs pseudomorph

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8f189992b8d24a3316bccb0b2cb3a39
https://www.research.manchester.ac.uk/portal/en/publications/design-and-characterisations-of-doublechannel-gaas-phemt-schottky-diodes-based-on-vertically-stacked-mmics-for-a-receiver-protection-limiter(b144f21c-1176-44ac-9029-e02ce3c3fbc5).html

Electromagnetic Modelling of MMIC CPWs for High Frequency Applications

Autor: Emerson P. Sinulingga, Ali A. Rezazadeh, Peter B. K. Kyabaggu

Publikováno v: IOP Conference Series: Materials Science and Engineering. 308:012051

Realising the theoretical electrical characteristics of components through modelling can be carried out using computer-aided design (CAD) simulation tools. If the simulation model provides the expected characteristics, the fabrication process of Mono

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c6bab65b6e8ecbd207c1d332ee483848
https://doi.org/10.1088/1757-899x/308/1/012051

0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

Autor: Christophe Gaquiere, Mayahsa M. Ali, Peter B. K. Kyabaggu, Yongjian Zhang, Norshakila Haris, Ali A. Rezazadeh, Mohammad A. Alim

Publikováno v: 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

0.25 μm gate AlGaN/GaN/SiC HEMT's nonlinearity modelling and characterization over a wide temperature and frequency have been studied for the first time. The nonlinearity of these devices has been carried out using a two-tone intermodulation distort

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::184d25fce36198e610012e773c869114
https://doi.org/10.1109/eumic.2015.7345088

Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

Autor: Norshakila Haris, Christophe Gaquiere, Mohammad A. Alim, Peter B. K. Kyabaggu, Yongjian Zhang, Ali A. Rezazadeh, Mayahsa M. Ali

Publikováno v: 2015 European Microwave Conference (EuMC).

Linear and nonlinear characteristics of 0.25 µm AlGaN/GaN HEMT grown on SiC substrate have been studied as a function of biasing, input power, frequency and temperature using a two-tone intermodulation distortion measurement technique for the first

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79a340ad9b2759c7941234d8a1711963
https://doi.org/10.1109/eumc.2015.7345842