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pro vyhledávání: '"Pete Beckage"'
Autor:
White Ted, Suresh Venkatesan, Jack Grant, D. Eades, Greg Spencer, Mariam Sadaka, Bich-Yen Nguyen, R. Garcia, Jon D. Cheek, Nigel Cave, Pete Beckage, Mark D. Hall, Tom Kropewnicki, Stefan Zollner, John Norbert, Gauri Karve, John J. Hackenberg, Chungwei Lin, I-Lu Wu
Publikováno v:
ECS Meeting Abstracts. :1036-1036
Hole mobility is significantly higher for silicon MOSFETs with channels along a direction on the (110) plane than the usual (100) plane. Formation of (110) PMOS and (100) NMOS transistors is possible through use of Dual Substrate Orientation (DSO) in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7af75697e093e50c6aba6823fa909ef2
https://doi.org/10.1149/ma2006-02/20/1036
https://doi.org/10.1149/ma2006-02/20/1036
