Zobrazeno 1 - 10
of 142
pro vyhledávání: '"Petar Biljanović"'
Publikováno v:
Journal of Energy - Energija. 55:690-705
Thyristors are susceptible to the increase rate of anode voltage, recovery overvoltage and current increase rate. They are therefore protected by means of supplementary circuits. Sometimes a protection circuit that has been designed to attenuate a ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5454362f6bd334356f025655d95fbef
https://doi.org/10.37798/2006556405
https://doi.org/10.37798/2006556405
Publikováno v:
IEEE Transactions on Electron Devices. 50:1645-1651
The fabrication and characterization of very compact horizontal current bipolar transistor (HCBT) is presented. The active transistor region is processed in the sidewalls of the n-hill, which makes this structure attractive for the integration with p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::858f25ace854d75a27a81fc0ebeff675
https://doi.org/10.1109/ted.2003.813910
https://doi.org/10.1109/ted.2003.813910
Autor:
Davor Ristić, Petar Biljanović, Krešimir Furić, Hrvoje Gebavi, Giancarlo C. Righini, Svetozar Musić, Maurizio Montagna, M. Ferarri, Maja Balarin, Mira Ristić, Mile Ivanda, Sanja Žonja, Ozren Gamulin
Publikováno v:
Journal of molecular structure
834 (2007): 461–464.
info:cnr-pdr/source/autori:M. Ivanda, H. Gebavi, D. Ristic, K. Furic, S. Music, M. Ristic, S. Zonja, P. Biljanovic, O. Gamulin, M. Balarin, M. Montagna, M. Ferrari, and G. C. Righini/titolo:Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method/doi:/rivista:Journal of molecular structure (Print)/anno:2007/pagina_da:461/pagina_a:464/intervallo_pagine:461–464/volume:834
834 (2007): 461–464.
info:cnr-pdr/source/autori:M. Ivanda, H. Gebavi, D. Ristic, K. Furic, S. Music, M. Ristic, S. Zonja, P. Biljanovic, O. Gamulin, M. Balarin, M. Montagna, M. Ferrari, and G. C. Righini/titolo:Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method/doi:/rivista:Journal of molecular structure (Print)/anno:2007/pagina_da:461/pagina_a:464/intervallo_pagine:461–464/volume:834
The Si-rich silicon oxide (SiO x ) thin films are prepared on silicon crystalline substrates by low pressure chemical vapor deposition (LPCVD) method. The oxygen concentration x are controlled by the ratio of the partial pressures of N 2 O and SiH 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::586c465b474426ed9206eafd4d5c45ff
https://doi.org/10.1016/j.molstruc.2006.09.036
https://doi.org/10.1016/j.molstruc.2006.09.036
Publikováno v:
2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748).
The observed improvement of BV/sub CEO/ and f/sub T//spl middot/BV/sub CEO/ product of horizontal current bipolar transistor (HCBT) is explained by the collector charge sharing between the extrinsic and intrinsic base acceptors. It reduces the maximu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280bc9c3347d596ebd131b5c7639a44d
https://doi.org/10.1109/smicnd.2004.1403016
https://doi.org/10.1109/smicnd.2004.1403016
Publikováno v:
Automatika : časopis za automatiku, mjerenje, elektroniku, računarstvo i komunikacije
Volume 46.
Issue 1-2
Volume 46.
Issue 1-2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______951::5da8b3dce2655cd198e9a28fa6d6d43f
https://hrcak.srce.hr/6847
https://hrcak.srce.hr/6847
A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the sel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::639b529eb5d485c25c866275fd1ac727
https://www.bib.irb.hr/189164
https://www.bib.irb.hr/189164
Publikováno v:
Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521).
In modern fast bipolar transistor design, high frequency performance and current operating level are traded off with breakdown voltages. Charge sharing between extrinsic and intrinsic base acceptors reduces the maximum electric field in the intrinsic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9566b42cdcf7fd4430181f90e620e634
https://doi.org/10.1109/melcon.2004.1346766
https://doi.org/10.1109/melcon.2004.1346766
Autor:
Petar Biljanović, Tomislav Suligoj, Kang L. Wang, Kevin J. Chen, Johnny K. O. Sin, Kenneth Tsui, Haitao Liu
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
The new pillar-like structures, such as vertical memory cells and FinFETs [1] are introduced as the end-of-scaling devices for the improvement of the MOSFETs characteristics and for the reduction of the chip area consumption. Bipolar transistors are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::664e2a0c49f135950bfb39c89c9e5cc9
https://doi.org/10.1109/isdrs.2003.1272372
https://doi.org/10.1109/isdrs.2003.1272372
Publikováno v:
Automatika : časopis za automatiku, mjerenje, elektroniku, računarstvo i komunikacije
Volume 45.
Issue 1-2
Volume 45.
Issue 1-2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______951::e725eb389ace2f4a3f7c358bc4d4bb54
https://hrcak.srce.hr/file/10262
https://hrcak.srce.hr/file/10262
A novel horizontal current bipolar transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs, is presented. The HCBT is processed by a low-cost technology in the (111) sidewalls on the [110] wafers, with minimized volume of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::acb155837f51ec1923fe2557a1a5a038
https://www.bib.irb.hr/154000
https://www.bib.irb.hr/154000