Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Perttu, Sippola"'
Autor:
Zhen Zhu, Perttu Sippola, Oili M. E. Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen, Hele Savin
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 9
Externí odkaz:
https://doaj.org/article/4a10cddf023348fabf335679737f0351
Autor:
Jarmo Leppäniemi, Perttu Sippola, Antti Peltonen, Jari J. Aromaa, Harri Lipsanen, Jari Koskinen
Publikováno v:
ACS Omega, Vol 3, Iss 2, Pp 1791-1800 (2018)
Externí odkaz:
https://doaj.org/article/ed524119a4da4dcbba1640876584be98
Autor:
Zhen, Zhu, Perttu, Sippola, Oili M E, Ylivaara, Chiara, Modanese, Marisa, Di Sabatino, Kenichiro, Mizohata, Saoussen, Merdes, Harri, Lipsanen, Hele, Savin
Publikováno v:
Nanoscale Research Letters
In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C usi
Autor:
Mikael Broas, Glenn Ross, Harri Lipsanen, Sami Franssila, Mervi Paulasto-Kröckel, Ville Rontu, Perttu Sippola, Timo Sajavaara
Publikováno v:
Journal of Vacuum Science and Technology A. 36(2)
The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractica
Publikováno v:
JAPANESE JOURNAL OF APPLIED PHYSICS. 57(12)
We report the effect of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition for moisture barrier applications. The Al2O3 films were grown at 90 °C using trimethylaluminum and O2 plasma as
Publikováno v:
Physica Status Solidi (a) applications and materials science
In this contribution, pulsed radio frequency (rf) glow discharge optical emission spectroscopy (GDOES) is used to investigate the film properties of SiO2 deposited by plasma enhanced atomic layer deposition (PEALD), for example, the chemical composit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78c0a9085508809b22a355ccae0a1a23
http://hdl.handle.net/11250/2609750
http://hdl.handle.net/11250/2609750
Publikováno v:
ACS Omega, Vol 3, Iss 2, Pp 1791-1800 (2018)
Corrosion protection of steel obtained with physical vapor deposition (PVD) coatings can be further improved by sealing the intrinsic pinholes with atomic layer deposition (ALD) coatings. In this work, the effect of surface wear on corrosion protecti
Autor:
Matti, Putkonen, Perttu, Sippola, Laura, Svärd, Timo, Sajavaara, Jari, Vartiainen, Iain, Buchanan, Ulla, Forsström, Pekka, Simell, Tekla, Tammelin
Publikováno v:
Philosophical transactions. Series A, Mathematical, physical, and engineering sciences. 376(2112)
In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO2 using AP-LTO® 330 and ozone (O3) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibril
Autor:
Leena-Sisko Johansson, Perttu Sippola, Elisa Arduca, Alexander Pyymaki Perros, Harri Lipsanen
Publikováno v:
2017 IMAPS Nordic Conference on Microelectronics Packaging (NordPac).
Low temperature high quality thermal atomic layer deposition (ALD) HfO 2 process has been developed and characterized using different oxidant sources—water, water-ozone, and ozone. Despite a low deposition temperature of 170 °C, the coatings are s
Atomic Layer Deposition (ALD) of Al 2 O 3 /TiO 2 nanolaminate was applied to improve the sealing properties of CrN coating deposited with Physical Vapor Deposition (PVD) on high speed steel (HSS). The corrosion protection properties were explored wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::979727838ccbb1d475081aad0e20b792
https://aaltodoc.aalto.fi/handle/123456789/28750
https://aaltodoc.aalto.fi/handle/123456789/28750