Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch

Autor: Tosson Elalaily, Martin Berke, Ilari Lilja, Alexander Savin, Gergő Fülöp, Lőrinc Kupás, Thomas Kanne, Jesper Nygård, Péter Makk, Pertti Hakonen, Szabolcs Csonka

Publikováno v: Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)

Abstract The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this

Externí odkaz: https://doaj.org/article/007d26b3ecd8418a85092d55424e8911

Suppression of 1/f noise in graphene due to anisotropic mobility fluctuations induced by impurity motion

Autor: Masahiro Kamada, Weijun Zeng, Antti Laitinen, Jayanta Sarkar, Sheng-Shiuan Yeh, Kirsi Tappura, Heikki Seppä, Pertti Hakonen

Publikováno v: Communications Physics, Vol 6, Iss 1, Pp 1-6 (2023)

Abstract Low frequency resistance variations due to mobility fluctuations is one of the key factors of 1/f noise in metallic conductors. According to theory, such noise in a two-dimensional (2D) device can be suppressed to zero at small magnetic fiel

Externí odkaz: https://doaj.org/article/fb239ad26efb4519b808791499195695

Critical current fluctuations in graphene Josephson junctions

Autor: Mohammad T. Haque, Marco Will, Matti Tomi, Preeti Pandey, Manohar Kumar, Felix Schmidt, Kenji Watanabe, Takashi Taniguchi, Romain Danneau, Gary Steele, Pertti Hakonen

Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)

Abstract We have studied 1/f noise in critical current $$I_c$$ I c in h-BN encapsulated monolayer graphene contacted by NbTiN electrodes. The sample is close to diffusive limit and the switching supercurrent with hysteresis at Dirac point amounts to

Externí odkaz: https://doaj.org/article/7a7bb27580b64372a25dda797d381d36

Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

Autor: Ying Liu, Zhenbing Tan, Manohar Kumar, T. S. Abhilash, Guan-jun Liu, Pertti Hakonen

Publikováno v: APL Materials, Vol 6, Iss 9, Pp 091102-091102-7 (2018)

Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stack

Externí odkaz: https://doaj.org/article/207dbb86dbbd473e89f7402ae82dfb53

Electrical Low-Frequency 1/fγ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platform

Autor: Heikki Seppä, Pertti Hakonen, Marco Will, Antti Laitinen, Masahiro Kamada, Weijun Zeng, Kirsi Tappura, Jayanta Sarkar

Publikováno v: Kamada, M, Laitinen, A, Zeng, W, Will, M, Sarkar, J, Tappura, K, Seppä, H & Hakonen, P 2021, ' Electrical Low-Frequency 1/fγ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platform ', Nano Letters, vol. 21, no. 18, pp. 7637-7643 . https://doi.org/10.1021/acs.nanolett.1c02325
Nano Letters

Low-frequency $1/f^{\gamma}$ noise is ubiquitous, even in high-end electronic devices. For qubits such noise results in decrease of their coherence times. Recently, it was found that adsorbed O$_2$ molecules provide the dominant contribution to flux

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc1105cc264320644fe8fcccd6f4c0b3
https://cris.vtt.fi/en/publications/514d1d37-5e12-4199-86c1-3960868a6bcd