Zobrazeno 1 - 10
of 249
pro vyhledávání: '"Persichetti L"'
Autor:
Camilli, L., Galbiati, M., Di Gaspare, L., De Seta, M., Píš, I., Bondino, F., Caporale, A., Veigang-Radulescu, V. -P., Hofmann, S., Sodo, A., Gunnella, R., Persichetti, L.
Publikováno v:
Applied Surface Science 2022
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defec
Externí odkaz:
http://arxiv.org/abs/2204.02037
Autor:
Persichetti, L., Paoloni, D., Apponi, A., Camilli, L., Caporale, A., Babenko, V., Hofmann, S., Angelucci, M., Cimino, R., De Seta, M., Ruocco, A., Di Gaspare, L.
Publikováno v:
In Materials Science in Semiconductor Processing April 2024 173
Autor:
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M.
Publikováno v:
Phys. Rev. Applied 13, 044062 (2020)
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic lands
Externí odkaz:
http://arxiv.org/abs/2002.00851
Publikováno v:
Phys. Rev. Research 2, 013032 (2020)
Combining electron paramagnetic resonance (EPR) with scanning tunneling microscopy (STM) enables detailed insight into the interactions and magnetic properties of single atoms on surfaces. A requirement for EPR-STM is the efficient coupling of microw
Externí odkaz:
http://arxiv.org/abs/1908.03379
Autor:
Persichetti, L., De Seta, M., Scaparro, A. M., Miseikis, V., Notargiacomo, A., Ruocco, A., Sgarlata, A., Fanfoni, M., Fabbri, F., Coletti, C., Di Gaspare, L.
Publikováno v:
Applied Surface Science 499, 143923 (2019)
We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spectroscopic and morphological information, we find that the quality of g
Externí odkaz:
http://arxiv.org/abs/1906.01571
Autor:
Persichetti, L., Fanfoni, M., Bonanni, B., De Seta, M., Di Gaspare, L., Goletti, C., Ottaviano, L., Sgarlata, A.
Publikováno v:
Surface Science, 683 31-37 (2019)
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very diverse grow
Externí odkaz:
http://arxiv.org/abs/1902.01207
Autor:
Persichetti, L., Di Gaspare, L., Fabbri, F., Scaparro, A. M., Notargiacomo, A., Sgarlata, A., Fanfoni, M., Miseikis, V., Coletti, C., De Seta, M.
Publikováno v:
Carbon 145, 345 (2019)
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting
Externí odkaz:
http://arxiv.org/abs/1901.06311
Autor:
Grange, T., Stark, D., Scalari, G., Faist, J., Persichetti, L., Di Gaspare, L., De Seta, M., Ortolani, M., Paul, D. J., Capellini, G., Birner, S., Virgilio, M.
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe cas
Externí odkaz:
http://arxiv.org/abs/1811.12879
Autor:
Montanari, M., Virgilio, M., Manganelli, C. L., Zaumseil, P., Zoellner, M. H., Hou, Y., Schubert, M. A., Persichetti, L., Di Gaspare, L., De Seta, M., Vitiello, E., Bonera, E., Pezzoli, F., Capellini, G.
Publikováno v:
Phys. Rev. B 98, 195310 (2018)
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetr
Externí odkaz:
http://arxiv.org/abs/1811.08665
Autor:
Persichetti, L., Fanfoni, M., De Seta, M., Di Gaspare, L., Ottaviano, L., Goletti, C., Sgarlata, A.
Publikováno v:
Applied Surface Science 462, 86 (2018)
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 {\deg}C. This temperature range is relevant in many surface-preparation recipes of the Ge surface. The density of the defects dep
Externí odkaz:
http://arxiv.org/abs/1809.03404