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pro vyhledávání: '"Pershun, Yu.P."'
Autor:
Voronov, D.L., Zubarev, E.N., Kondratenko, V.V., Pershun, Yu.P., Sevryukova, V.A., Bugayev, Ye.A.
Kinetics of phase formation Sc/Si multilayers and Si/Sc/Si three-layers within the temperature range of 130-400°C has been studied by cross-sectional transmission electron microscopy and small-angle X-ray reflectometry. Growth of ScSi silicide gover
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::2da4b13be336018f518ba51fea03621c
http://dspace.nbuv.gov.ua/handle/123456789/137250
http://dspace.nbuv.gov.ua/handle/123456789/137250
