Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Pericle Varasteanu"'
Autor:
Livia Alexandra Dinu, Cosmin Romanitan, Martino Aldrigo, Catalin Parvulescu, Florin Nastase, Silviu Vulpe, Raluca Gavrila, Pericle Varasteanu, Andreea Bianca Serban, Rihem Noumi, Olga M. Ishchenko
Publikováno v:
Materials & Design, Vol 233, Iss , Pp 112194- (2023)
This paper presents the area-selective wet etching (ASWE) method as a novel approach to have a selective patterning of a 6.8 nm-thick zirconium-doped hafnium oxide (HZO) thin film, to improve the performance of a metal ferroelectric metal (MFM)-like
Externí odkaz:
https://doaj.org/article/4c4b4e22e62d4ed294fd9025c33b4608
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 158-167 (2019)
An alternative technological approach is proposed to obtain a SiO2 film on SiC using processes that finally reduce the effective fabrication costs. Accordingly, we report achieving of a high-quality oxide on 4H-SiC substrate using a process flow that
Externí odkaz:
https://doaj.org/article/2aa44c1b9db54577a4272a26e80f87db
Autor:
Pericle Varasteanu, Antonio Radoi, Oana Tutunaru, Anton Ficai, Razvan Pascu, Mihaela Kusko, Iuliana Mihalache
Publikováno v:
Nanomaterials, Vol 11, Iss 9, p 2460 (2021)
In this work, we report the development of self-powered photodetectors that integrate silicon nanoholes (SiNHs) and four different types of metal nanowires (AgNWs, AuNWs, NiNWs, PtNWs) applied on the SiNHs’ surface using the solution processing met
Externí odkaz:
https://doaj.org/article/f5de8b24d6f3479d9cf9d3f19143e9df
Autor:
Pericle Varasteanu, Mihaela Kusko
Publikováno v:
Applied Sciences, Vol 11, Iss 10, p 4353 (2021)
Modifying the structure of surface plasmon resonance based sensors by adding 2D materials has been proven to considerably enhance the sensor’s sensitivity in comparison to a traditional three layer configuration. Moreover, a thin semiconductor film
Externí odkaz:
https://doaj.org/article/a68cd1adc24049158990439feca2f885
Autor:
Pericle Varasteanu, Cosmin Romanitan, Alexandru Bujor, Oana Tutunaru, Gabriel Craciun, Iuliana Mihalache, Antonio Radoi, Mihaela Kusko
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2321 (2020)
We report a simple, scalable route to wafer-size processing for fabrication of tunable nanoporous gold (NPG) by the anodization process at low constant current in a solution of hydrofluoric acid and dimethylformamide. Microstructural, optical, and el
Externí odkaz:
https://doaj.org/article/5951e36568aa4cb0b5d29e71241f53e3
Publikováno v:
Journal of Applied Crystallography. 54:847-855
Porous silicon layers with different porosities were prepared by adjusting the anodization current density of the electrochemical etching process, starting from highly doped p-type crystalline silicon wafers. The microstructural parameters of the por
Autor:
Pericle Varasteanu, Mihaela Kusko, Antonio Radoi, Oana Tutunaru, Cosmin Romanitan, Irina-Nicoleta Bratosin, Alexandru Bujor
Publikováno v:
The Journal of Physical Chemistry C. 125:6043-6054
Supercapacitors have presented promising results in energy storage until now, making them a possible candidate for becoming a mainstream rechargeable power source, which could be easily integrated ...
Autor:
Pericle Varasteanu
Publikováno v:
Plasmonics. 16:341-347
The 2D material tin selenide monolayer (SnSe) has attracted a lot of attention due to its excellent optoelectronic properties. This study focuses on the investigation of the potential improvement of the response of surface plasmon resonance (SPR) sen
Autor:
Pericle Varasteanu
Publikováno v:
Plasmonics. 15:243-253
In this study, we explored the geometrical and material parameters of surface plasmon resonance (SPR) sensors, in order to gain insight about the mechanisms that control the sensors’ response when different 2D materials monolayers (MoS2, MoSe2, WS2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 158-167 (2019)
An alternative technological approach is proposed to obtain a SiO2 film on SiC using processes that finally reduce the effective fabrication costs. Accordingly, we report achieving of a high-quality oxide on 4H-SiC substrate using a process flow that