Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Perez-Morelo DJ"'
Autor:
Wang M; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA., Perez-Morelo DJ; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA., Ramer G; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; Institute of Chemical Technologies and Analytics, TU Wien, Getreidemarkt 9, 1060 Vienna, Austria., Pavlidis G; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Schwartz JJ; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Yu L; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Ilic R; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Centrone A; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Aksyuk VA; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Publikováno v:
Science advances [Sci Adv] 2023 Mar 17; Vol. 9 (11), pp. eadf7595. Date of Electronic Publication: 2023 Mar 15.
Autor:
Wang M; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States., Ramer G; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.; Institute of Chemical Technologies and Analytics, TU Wien, Getreidemarkt 9, 1060 Vienna, Austria., Perez-Morelo DJ; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States., Pavlidis G; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.; Department of Mechanical Engineering, University of Connecticut, Storrs, Connecticut 06269, United States., Schwartz JJ; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Yu L; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Ilic R; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Aksyuk VA; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Centrone A; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.
Publikováno v:
Nano letters [Nano Lett] 2022 Jun 08; Vol. 22 (11), pp. 4325-4332. Date of Electronic Publication: 2022 May 17.
Autor:
Wang M; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA., Perez-Morelo DJ; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA., Lopez D; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA., Aksyuk VA; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Publikováno v:
Physical review. X [Phys Rev X] 2022; Vol. 12 (4).
Autor:
Wang M; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742 USA., Perez-Morelo DJ; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742 USA., Aksyuk V; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
Publikováno v:
Microsystems & nanoengineering [Microsyst Nanoeng] 2021 Jul 07; Vol. 7, pp. 52. Date of Electronic Publication: 2021 Jul 07 (Print Publication: 2021).
Publikováno v:
Optics express [Opt Express] 2021 Mar 01; Vol. 29 (5), pp. 6967-6979.