Transition from partial to full depletion in advanced SOI MOSFETs: Impact of channel length and temperature

Autor: Zaouia, S., Cristoloveanu, S., Sureddin, M., Goktepeli, S., Perera, A.H.

Publikováno v: In Solid State Electronics 2007 51(2):252-259

Hybrid Repair of a Thoraco-abdominal Aortic Aneurysm Associated with Polycystic Kidney Disease

Autor: Perera, A.H., Kashef, E., Courtois, N., Wolfe, J.

Publikováno v: In EJVES Extra September 2012 24(3):e13-e15

Impact of process-induced strain in very short SOI PMOSFETs

Autor: Zaouia, S., Boccaccio, C., Sureddin, M., Perera, A.H., Cristoloveanu, S.

Publikováno v: Com. a NATO Advanced Research Workshop on Nanoscaled Semiconductor-On-Insulator Structures and Devices
Com. a NATO Advanced Research Workshop on Nanoscaled Semiconductor-On-Insulator Structures and Devices, 2006, Grenoble, France. pp.XX

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d235f99a963d4ba65fa1f4c5ad46c24f
https://hal.archives-ouvertes.fr/hal-00146919

Impact of arsenic deactivation in polycrystalline silicon and at polysilicon-monosilicon interfaces on contact resistance.

Autor: Perera, A.H., Taylor, W.J., Orlowski, M.

Publikováno v: Proceedings of IEEE International Electron Devices Meeting; 1993, p835-838, 4p

Integration of a double polysilicon, fully self-aligned bipolar transistor into a 0.5 mu m BiCMOS technology for fast 4 MBit SRAMs.

Autor: Hayden, J.D., Burnett, J.D., Perera, A.H., Mele, T.C., Walczyk, F.W., Kaushik, V., Lage, C.S., See, Y.-C.

Publikováno v: Proceedings of the 1991 Bipolar Circuits & Technology Meeting; 1991, p17-20, 4p